Cojocari, Oleg ; Oprea, I. ; Sydlo, Cezary ; Zimmermann, R. ; Walber, A. ; Henneberger, R. ; Hartnagel, Hans L. (2007)
THz Schottky diodes on epitaxial AIGaAs-membrane.
2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics. Cardiff, UK (03.09.2007-07.09.2007)
doi: 10.1109/ICIMW.2007.4516711
Konferenzveröffentlichung, Bibliographie
Kurzbeschreibung (Abstract)
Schottky structures based on quasi-vertical diode (QVD) design concept are essentially improved by optimization of the GaAs/AlGaAs wafer layout and fabrication process. Insertion of a 4 mum-thin epitaxial AlGaAs layer permits more accurate micromachining of the membrane-substrate without significant degradation of anode parameters. This greatly improved repeatability and increased the yield of the fabrication process. New technology tolerances allowed further optimization of structure geometry, which in turn led to achievement of state-of-the-art mixer performance at millimeter-waves.
| Typ des Eintrags: | Konferenzveröffentlichung |
|---|---|
| Erschienen: | 2007 |
| Autor(en): | Cojocari, Oleg ; Oprea, I. ; Sydlo, Cezary ; Zimmermann, R. ; Walber, A. ; Henneberger, R. ; Hartnagel, Hans L. |
| Art des Eintrags: | Bibliographie |
| Titel: | THz Schottky diodes on epitaxial AIGaAs-membrane |
| Sprache: | Englisch |
| Publikationsjahr: | 2007 |
| Ort: | Piscataway, NJ |
| Verlag: | IEEE Operations Center |
| Buchtitel: | 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics |
| Veranstaltungstitel: | 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics |
| Veranstaltungsort: | Cardiff, UK |
| Veranstaltungsdatum: | 03.09.2007-07.09.2007 |
| DOI: | 10.1109/ICIMW.2007.4516711 |
| Kurzbeschreibung (Abstract): | Schottky structures based on quasi-vertical diode (QVD) design concept are essentially improved by optimization of the GaAs/AlGaAs wafer layout and fabrication process. Insertion of a 4 mum-thin epitaxial AlGaAs layer permits more accurate micromachining of the membrane-substrate without significant degradation of anode parameters. This greatly improved repeatability and increased the yield of the fabrication process. New technology tolerances allowed further optimization of structure geometry, which in turn led to achievement of state-of-the-art mixer performance at millimeter-waves. |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Mikrowellenelektronik |
| Hinterlegungsdatum: | 20 Nov 2008 08:28 |
| Letzte Änderung: | 31 Okt 2024 09:27 |
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