Höchbauer, Tobias ; Misra, Andy ; Nastasi, Michael ; Mayer, James W. ; Ensinger, Wolfgang (2006)
Formation of hydrogen complexes in proton implanted Silicon and their influence on the crystal damage.
In: Nuclear Instruments and Methods in Physics Research B, 242 (1-2)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We studied the rearrangement of ion-implanted hydrogen in 〈1 0 0〉 oriented n-type silicon wafers upon annealing and its effect on the crystal damage. The obtained results reveal information about the damage accumulation caused by the thermally induced rearrangement of the implanted Hydrogen. The gained knowledge was correlated to the depth distributions and orientations of H-platelets, which formed during annealing and were examined by cross-section transmission electron microscopy analysis.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2006 |
| Autor(en): | Höchbauer, Tobias ; Misra, Andy ; Nastasi, Michael ; Mayer, James W. ; Ensinger, Wolfgang |
| Art des Eintrags: | Bibliographie |
| Titel: | Formation of hydrogen complexes in proton implanted Silicon and their influence on the crystal damage |
| Sprache: | Englisch |
| Publikationsjahr: | Januar 2006 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nuclear Instruments and Methods in Physics Research B |
| Jahrgang/Volume einer Zeitschrift: | 242 |
| (Heft-)Nummer: | 1-2 |
| Kurzbeschreibung (Abstract): | We studied the rearrangement of ion-implanted hydrogen in 〈1 0 0〉 oriented n-type silicon wafers upon annealing and its effect on the crystal damage. The obtained results reveal information about the damage accumulation caused by the thermally induced rearrangement of the implanted Hydrogen. The gained knowledge was correlated to the depth distributions and orientations of H-platelets, which formed during annealing and were examined by cross-section transmission electron microscopy analysis. |
| Freie Schlagworte: | Ion-cut; Implantation; Silicon on insulator |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik |
| Hinterlegungsdatum: | 20 Nov 2008 08:26 |
| Letzte Änderung: | 20 Feb 2020 13:24 |
| PPN: | |
| Sponsoren: | This work was sponsored by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences. |
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