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Formation of hydrogen complexes in proton implanted Silicon and their influence on the crystal damage

Höchbauer, Tobias and Misra, Andy and Nastasi, Michael and Mayer, James W. and Ensinger, Wolfgang (2006):
Formation of hydrogen complexes in proton implanted Silicon and their influence on the crystal damage.
In: Nuclear Instruments and Methods in Physics Research B, Elsevier, pp. 623-626, 242, (1-2), [Article]

Abstract

We studied the rearrangement of ion-implanted hydrogen in 〈1 0 0〉 oriented n-type silicon wafers upon annealing and its effect on the crystal damage. The obtained results reveal information about the damage accumulation caused by the thermally induced rearrangement of the implanted Hydrogen. The gained knowledge was correlated to the depth distributions and orientations of H-platelets, which formed during annealing and were examined by cross-section transmission electron microscopy analysis.

Item Type: Article
Erschienen: 2006
Creators: Höchbauer, Tobias and Misra, Andy and Nastasi, Michael and Mayer, James W. and Ensinger, Wolfgang
Title: Formation of hydrogen complexes in proton implanted Silicon and their influence on the crystal damage
Language: English
Abstract:

We studied the rearrangement of ion-implanted hydrogen in 〈1 0 0〉 oriented n-type silicon wafers upon annealing and its effect on the crystal damage. The obtained results reveal information about the damage accumulation caused by the thermally induced rearrangement of the implanted Hydrogen. The gained knowledge was correlated to the depth distributions and orientations of H-platelets, which formed during annealing and were examined by cross-section transmission electron microscopy analysis.

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research B
Volume: 242
Number: 1-2
Publisher: Elsevier
Uncontrolled Keywords: Ion-cut; Implantation; Silicon on insulator
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 20 Nov 2008 08:26
Funders: This work was sponsored by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences.
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