Nordlund, K. ; Nord, J. ; Krasheninnikov, A. V. ; Albe, Karsten (2004)
Atomic-scale simulations of radiation effects in GaN and carbon nanotubes.
In: MRS proceedings, 792
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Gallium nitride and carbon nanotubes have received wide interest in the materials research community since the mid-1990's. The former material is already in use in optoelectronics applications, while the latter is considered to be extremely promising in a wide range of materials. Common to both materials is that ion irradiation may be useful for modifying their properties. In this paper we overview our recent molecular dynamics simulations results on ion irradiation of these materials. We employ such potentials to study the basic physics of how ion irradiation affects these materials. In particular we discuss the reasons for the high radiation hardness of GaN, and the surprising nature of vacancies and interstitials in carbon nanotubes
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2004 |
| Autor(en): | Nordlund, K. ; Nord, J. ; Krasheninnikov, A. V. ; Albe, Karsten |
| Art des Eintrags: | Bibliographie |
| Titel: | Atomic-scale simulations of radiation effects in GaN and carbon nanotubes |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Januar 2004 |
| Verlag: | Mater. Res. Soc, Warrendale, PA, USA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | MRS proceedings |
| Jahrgang/Volume einer Zeitschrift: | 792 |
| Kurzbeschreibung (Abstract): | Gallium nitride and carbon nanotubes have received wide interest in the materials research community since the mid-1990's. The former material is already in use in optoelectronics applications, while the latter is considered to be extremely promising in a wide range of materials. Common to both materials is that ion irradiation may be useful for modifying their properties. In this paper we overview our recent molecular dynamics simulations results on ion irradiation of these materials. We employ such potentials to study the basic physics of how ion irradiation affects these materials. In particular we discuss the reasons for the high radiation hardness of GaN, and the surprising nature of vacancies and interstitials in carbon nanotubes |
| Freie Schlagworte: | carbon nanotubes, gallium compounds, hardness, III-V semiconductors, interstitials, ion beam effects, molecular dynamics method, vacancies (crystal), wide band gap semiconductors |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung |
| Hinterlegungsdatum: | 20 Nov 2008 08:25 |
| Letzte Änderung: | 20 Feb 2020 13:25 |
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