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Self-consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems

Neumann, Frederik and Genenko, Yuri A. and Melzer, Christian and Seggern, Heinz von (2006):
Self-consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems.
In: Journal of Applied Physics, pp. 084511 (1-8), 100, ISSN 0021-8979, [Article]

Abstract

A consistent device model to describe current-voltage characteristics of metal∕insulator∕metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework using density of states distributions. This approach leads to differential equations for the electric field which have to be solved in a self-consistent manner by considering the continuity of the electric displacement and the electrochemical potential in the complete system. The model is capable of describing the current-voltage characteristics of the metal∕insulator∕metal system in forward and reverse biases for arbitrary values of the metal∕insulator injection barriers. In the case of high injection barriers, approximations are provided offering a tool for comparison with experiments. Numerical calculations are performed exemplarily using a simplified model of an organic semiconductor.

Item Type: Article
Erschienen: 2006
Creators: Neumann, Frederik and Genenko, Yuri A. and Melzer, Christian and Seggern, Heinz von
Title: Self-consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems
Language: English
Abstract:

A consistent device model to describe current-voltage characteristics of metal∕insulator∕metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework using density of states distributions. This approach leads to differential equations for the electric field which have to be solved in a self-consistent manner by considering the continuity of the electric displacement and the electrochemical potential in the complete system. The model is capable of describing the current-voltage characteristics of the metal∕insulator∕metal system in forward and reverse biases for arbitrary values of the metal∕insulator injection barriers. In the case of high injection barriers, approximations are provided offering a tool for comparison with experiments. Numerical calculations are performed exemplarily using a simplified model of an organic semiconductor.

Journal or Publication Title: Journal of Applied Physics
Volume: 100
Uncontrolled Keywords: MIS devices, organic semiconductors, charge injection, semiconductor device models, electronic density of states, differential equations
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D4: Fatigue of organic electronic devices
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 20 Nov 2008 08:25
Additional Information:

SFB 595 Cooperation C5, D4

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