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Non-stoichiometric growth and precipitation formation in LTG-GaAsSb for THzapplications

Sigmund, J. and Sydlo, C. and Hartnagel, H. L. and Teissmann, R. and Benker, N. and Fuess, Hartmut and Rutz, F. and Koch, M. (2005):
Non-stoichiometric growth and precipitation formation in LTG-GaAsSb for THzapplications.
New York, NY, American Inst. of Physics, In: Papers from the 23rd North American Conference on Molecular Beam Epitaxy : [held at the University of California at Santa Barbara from 11 - 14 September 2005] / [Gerry Sullivan, proceedings ed.]. - New York, NY : American Inst. of Physics, 2006; S. 153, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2005
Creators: Sigmund, J. and Sydlo, C. and Hartnagel, H. L. and Teissmann, R. and Benker, N. and Fuess, Hartmut and Rutz, F. and Koch, M.
Title: Non-stoichiometric growth and precipitation formation in LTG-GaAsSb for THzapplications
Language: English
Series Name: Papers from the 23rd North American Conference on Molecular Beam Epitaxy : [held at the University of California at Santa Barbara from 11 - 14 September 2005] / [Gerry Sullivan, proceedings ed.]. - New York, NY : American Inst. of Physics, 2006; S. 153
Place of Publication: New York, NY
Publisher: American Inst. of Physics
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 20 Nov 2008 08:24
License: [undefiniert]
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