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Radiation hardness of CsBr:Eu2

Zimmermann, Jörg ; Hesse, Sabine ; Seggern, Heinz von ; Fuchs, M. ; Knüpfer, W. :
Radiation hardness of CsBr:Eu2.
[Online-Edition: http://www.sciencedirect.com/science/article/pii/S0022231304...]
In: Journal of luminescence, 114 (1) pp. 24-30.
[Artikel], (2005)

Offizielle URL: http://www.sciencedirect.com/science/article/pii/S0022231304...

Kurzbeschreibung (Abstract)

In this study,results on the radiation damage of the storage phosphor CsBr:Eu2+ are presented. It is shown that a high X-ray dose causes a significant deterioration of the photostimulated luminescence accompanied by a degradation of the UV-excited Eu2+ fluorescence. Since no related dose-dependent increase of Eu3+ luminescence is observed, the decrease of Eu2+ fluorescence is attributed to an agglomeration of Eu2+ leading to luminescence quenching. The correlated diffusivity of Eu2+ ions is ascribed to the presence of aggregated F-centres such as MEu-centres observed by means of absorption spectroscopy.

Typ des Eintrags: Artikel
Erschienen: 2005
Autor(en): Zimmermann, Jörg ; Hesse, Sabine ; Seggern, Heinz von ; Fuchs, M. ; Knüpfer, W.
Titel: Radiation hardness of CsBr:Eu2
Sprache: Englisch
Kurzbeschreibung (Abstract):

In this study,results on the radiation damage of the storage phosphor CsBr:Eu2+ are presented. It is shown that a high X-ray dose causes a significant deterioration of the photostimulated luminescence accompanied by a degradation of the UV-excited Eu2+ fluorescence. Since no related dose-dependent increase of Eu3+ luminescence is observed, the decrease of Eu2+ fluorescence is attributed to an agglomeration of Eu2+ leading to luminescence quenching. The correlated diffusivity of Eu2+ ions is ascribed to the presence of aggregated F-centres such as MEu-centres observed by means of absorption spectroscopy.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of luminescence
Band: 114
(Heft-)Nummer: 1
Verlag: Elsevier Science Publishing
Freie Schlagworte: Csbr:Eu2+. Storage phosphors, X-ray, Photostimulated luminescence, Radiation-induced defects
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Elektronische Materialeigenschaften
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 20 Nov 2008 08:21
Offizielle URL: http://www.sciencedirect.com/science/article/pii/S0022231304...
ID-Nummer: 10.1016/j.jlumin.2004.11.011
Sponsoren: The support of the Siemens AG (Medical Solutions) is gratefully acknowledged., We also acknowledge the support of the DFG (Deutsche Forschungsgemeinschaft) for financial support., We thank Martina Opitz from the Siemens AG for the production of many NIPs for the present investigations.
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