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Light-emitting field-effect transistor based on a tetracene thin film

Hepp, Aline and Heil, Holger and Weise, Wieland and Ahles, Marcus and Schmechel, Roland and Seggern, Heinz von (2003):
Light-emitting field-effect transistor based on a tetracene thin film.
In: Physical review letters, 91 (15), pp. 157406-1. The American Physical Society , DOI: 10.1103/PhysRevLett.91.157406,
[Article]

Abstract

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

Item Type: Article
Erschienen: 2003
Creators: Hepp, Aline and Heil, Holger and Weise, Wieland and Ahles, Marcus and Schmechel, Roland and Seggern, Heinz von
Title: Light-emitting field-effect transistor based on a tetracene thin film
Language: English
Abstract:

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

Journal or Publication Title: Physical review letters
Journal volume: 91
Number: 15
Publisher: The American Physical Society
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
Date Deposited: 19 Nov 2008 16:30
DOI: 10.1103/PhysRevLett.91.157406
Official URL: https://www.researchgate.net/deref/http%3A%2F%2Fdx.doi.org%2...
Identification Number: 10.1103/PhysRevLett.91.157406
License: [undefiniert]
Funders: The authors are grateful to the European Union for fi nancial support through the EU-FET-IST Project ILO No. IST-2001-33057.
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