TU Darmstadt / ULB / TUbiblio

Light-emitting field-effect transistor based on a tetracene thin film

Hepp, Aline ; Heil, Holger ; Weise, Wieland ; Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von :
Light-emitting field-effect transistor based on a tetracene thin film.
In: Physical review letters, Vol. 9 (15) pp. 157406-1.
[Artikel], (2003)

Kurzbeschreibung (Abstract)

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

Typ des Eintrags: Artikel
Erschienen: 2003
Autor(en): Hepp, Aline ; Heil, Holger ; Weise, Wieland ; Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von
Titel: Light-emitting field-effect transistor based on a tetracene thin film
Sprache: Englisch
Kurzbeschreibung (Abstract):

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical review letters
Band: Vol. 9
(Heft-)Nummer: 15
Verlag: The American Physical Society
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Elektronische Materialeigenschaften
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 19 Nov 2008 16:30
ID-Nummer: 10.1103/PhysRevLett.91.157406
Sponsoren: The authors are grateful to the European Union for fi nancial support through the EU-FET-IST Project ILO No. IST-2001-33057.
Export:

Optionen (nur für Redakteure)

Eintrag anzeigen Eintrag anzeigen