Hepp, Aline ; Heil, Holger ; Weise, Wieland ; Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von (2003)
Light-emitting field-effect transistor based on a tetracene thin film.
In: Physical review letters, 91 (15)
doi: 10.1103/PhysRevLett.91.157406
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2003 |
Autor(en): | Hepp, Aline ; Heil, Holger ; Weise, Wieland ; Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von |
Art des Eintrags: | Bibliographie |
Titel: | Light-emitting field-effect transistor based on a tetracene thin film |
Sprache: | Englisch |
Publikationsjahr: | 10 Oktober 2003 |
Verlag: | The American Physical Society |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical review letters |
Jahrgang/Volume einer Zeitschrift: | 91 |
(Heft-)Nummer: | 15 |
DOI: | 10.1103/PhysRevLett.91.157406 |
Kurzbeschreibung (Abstract): | We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested. |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
Hinterlegungsdatum: | 19 Nov 2008 16:30 |
Letzte Änderung: | 29 Apr 2020 07:51 |
PPN: | |
Sponsoren: | The authors are grateful to the European Union for fi nancial support through the EU-FET-IST Project ILO No. IST-2001-33057. |
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