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Light-emitting field-effect transistor based on a tetracene thin film

Hepp, Aline ; Heil, Holger ; Weise, Wieland ; Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von (2003)
Light-emitting field-effect transistor based on a tetracene thin film.
In: Physical review letters, 91 (15)
doi: 10.1103/PhysRevLett.91.157406
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

Typ des Eintrags: Artikel
Erschienen: 2003
Autor(en): Hepp, Aline ; Heil, Holger ; Weise, Wieland ; Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von
Art des Eintrags: Bibliographie
Titel: Light-emitting field-effect transistor based on a tetracene thin film
Sprache: Englisch
Publikationsjahr: 10 Oktober 2003
Verlag: The American Physical Society
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical review letters
Jahrgang/Volume einer Zeitschrift: 91
(Heft-)Nummer: 15
DOI: 10.1103/PhysRevLett.91.157406
Kurzbeschreibung (Abstract):

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften
Hinterlegungsdatum: 19 Nov 2008 16:30
Letzte Änderung: 29 Apr 2020 07:51
PPN:
Sponsoren: The authors are grateful to the European Union for fi nancial support through the EU-FET-IST Project ILO No. IST-2001-33057.
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