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Structure and electronic transport properties of Si-(B)-C-N ceramics

Herrmann, A. M. ; Wang, Y.-T. ; Ramakrishnan, P. A. ; Balzar, D. ; An, L. ; Haluschka, C. ; Riedel, R. :
Structure and electronic transport properties of Si-(B)-C-N ceramics.
In: Journal of the American Ceramic Society, 84 (10) S. 2260-2264.
[Artikel], (2001)

Kurzbeschreibung (Abstract)

The structure and electronic transport properties of polymer-derived pristine and boron-doped silicon carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B, C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have a significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor.

Typ des Eintrags: Artikel
Erschienen: 2001
Autor(en): Herrmann, A. M. ; Wang, Y.-T. ; Ramakrishnan, P. A. ; Balzar, D. ; An, L. ; Haluschka, C. ; Riedel, R.
Titel: Structure and electronic transport properties of Si-(B)-C-N ceramics
Sprache: Englisch
Kurzbeschreibung (Abstract):

The structure and electronic transport properties of polymer-derived pristine and boron-doped silicon carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B, C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have a significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of the American Ceramic Society
Band: 84
(Heft-)Nummer: 10
Verlag: Wiley
Freie Schlagworte: structure, electrical properties, silicon
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Disperse Feststoffe, Dispersive Solids
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 19 Nov 2008 16:27
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