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Structure and electronic transport properties of Si-(B)-C-N ceramics

Herrmann, A. M. ; Wang, Y.-T. ; Ramakrishnan, P. A. ; Balzar, D. ; An, L. ; Haluschka, C. ; Riedel, R. (2001):
Structure and electronic transport properties of Si-(B)-C-N ceramics.
84, In: Journal of the American Ceramic Society, (10), pp. S. 2260-2264. Wiley, [Article]

Abstract

The structure and electronic transport properties of polymer-derived pristine and boron-doped silicon carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B, C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have a significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor.

Item Type: Article
Erschienen: 2001
Creators: Herrmann, A. M. ; Wang, Y.-T. ; Ramakrishnan, P. A. ; Balzar, D. ; An, L. ; Haluschka, C. ; Riedel, R.
Title: Structure and electronic transport properties of Si-(B)-C-N ceramics
Language: English
Abstract:

The structure and electronic transport properties of polymer-derived pristine and boron-doped silicon carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B, C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have a significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor.

Journal or Publication Title: Journal of the American Ceramic Society
Volume: 84
Number: 10
Publisher: Wiley
Uncontrolled Keywords: structure, electrical properties, silicon
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
Date Deposited: 19 Nov 2008 16:27
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