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Crystal structures of two new high-pressure oxynitrides with composition SnGe 4 N 4 O 4 , from single-crystal electron diffraction

Gollé-Leidreiter, Philipp ; Bhat, Shrikant ; Wiehl, Leonore ; Wen, Qingbo ; Kroll, Peter ; Ishikawa, Ryo ; Etter, Martin ; Farla, Robert ; Ikuhara, Yuichi ; Riedel, Ralf ; Kolb, Ute (2024)
Crystal structures of two new high-pressure oxynitrides with composition SnGe 4 N 4 O 4 , from single-crystal electron diffraction.
In: Acta Crystallographica. Section B: Structural Science, Crystal Engineering and Materials, 80 (3)
doi: 10.1107/S2052520624002683
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

SnGe 4 N 4 O 4 was synthesized at high pressure (16 and 20 GPa) and high temperature (1200 and 1500°C) in a large-volume press. Powder X-ray diffraction experiments using synchrotron radiation indicate that the derived samples are mixtures of known and unknown phases. However, the powder X-ray diffraction patterns are not sufficient for structural characterization. Transmission electron microscopy studies reveal crystals of several hundreds of nanometres in size with different chemical composition. Among them, crystals of a previously unknown phase with stoichiometry SnGe 4 N 4 O 4 were detected and investigated using automated diffraction tomography (ADT), a three-dimensional electron diffraction method. Via ADT, the crystal structure could be determined from single nanocrystals in space group P 6 3 mc , exhibiting a nolanite-type structure. This was confirmed by density functional theory calculations and atomic resolution scanning transmission electron microscopy images. In one of the syntheses runs a rhombohedral 6 R polytype of SnGe 4 N 4 O 4 could be found together with the nolanite-type SnGe 4 N 4 O 4 . The structure of this polymorph was solved as well using ADT.

Typ des Eintrags: Artikel
Erschienen: 2024
Autor(en): Gollé-Leidreiter, Philipp ; Bhat, Shrikant ; Wiehl, Leonore ; Wen, Qingbo ; Kroll, Peter ; Ishikawa, Ryo ; Etter, Martin ; Farla, Robert ; Ikuhara, Yuichi ; Riedel, Ralf ; Kolb, Ute
Art des Eintrags: Bibliographie
Titel: Crystal structures of two new high-pressure oxynitrides with composition SnGe 4 N 4 O 4 , from single-crystal electron diffraction
Sprache: Englisch
Publikationsjahr: Juni 2024
Ort: IUCr Journals
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Acta Crystallographica. Section B: Structural Science, Crystal Engineering and Materials
Jahrgang/Volume einer Zeitschrift: 80
(Heft-)Nummer: 3
DOI: 10.1107/S2052520624002683
Kurzbeschreibung (Abstract):

SnGe 4 N 4 O 4 was synthesized at high pressure (16 and 20 GPa) and high temperature (1200 and 1500°C) in a large-volume press. Powder X-ray diffraction experiments using synchrotron radiation indicate that the derived samples are mixtures of known and unknown phases. However, the powder X-ray diffraction patterns are not sufficient for structural characterization. Transmission electron microscopy studies reveal crystals of several hundreds of nanometres in size with different chemical composition. Among them, crystals of a previously unknown phase with stoichiometry SnGe 4 N 4 O 4 were detected and investigated using automated diffraction tomography (ADT), a three-dimensional electron diffraction method. Via ADT, the crystal structure could be determined from single nanocrystals in space group P 6 3 mc , exhibiting a nolanite-type structure. This was confirmed by density functional theory calculations and atomic resolution scanning transmission electron microscopy images. In one of the syntheses runs a rhombohedral 6 R polytype of SnGe 4 N 4 O 4 could be found together with the nolanite-type SnGe 4 N 4 O 4 . The structure of this polymorph was solved as well using ADT.

Freie Schlagworte: 3D electron diffraction high, pressure-high temperature (HP-HT) synthesis, oxynitrides.
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Werkstofftechnik und Ressourcenmanagement
Hinterlegungsdatum: 20 Jan 2025 06:41
Letzte Änderung: 20 Jan 2025 10:20
PPN: 525421599
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