Yadav, Rahul ; Ludwig, Florian ; Faridi, Fahd Rushd ; Klopf, J. Michael ; Roskos, Hartmut G. ; Penirschke, Andreas ; Preu, Sascha (2024)
GaAs-based antenna-coupled field effect transistors as direct THz detectors across a wide frequency range from 0.2 to 29.8 THz.
In: Optics Express, 2024, 32 (24)
doi: 10.26083/tuprints-00028728
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
High-power coherent terahertz (THz) radiation from accelerator facilities such as free-electron lasers (FELs) is frequently used in pump-probe experiments where the pump or probe (or both) signals are intense THz pulses. Detectors for these applications have unique requirements that differ from those of low-power table-top systems. In this study, we demonstrate GaAs antenna-coupled field effect transistors (FETs) as a direct THz detector operating across a broad frequency spectrum ranging from 0.2 THz to 29.8 THz. At approximately 0.5 THz, the maximum current responsivity (ℜ_I) of 0.59 mA/W is observed, signifying a noise equivalent power (NEP) of 2.27 nW/√Hz . We report an empirical roll-off of f^(−3) for an antenna-coupled GaAs TeraFET detector. Still, NEP of 0.94 μW/√Hz and a current responsivity ℜ_I = 1.7 μA/W is observed at 29.8 THz, indicating that with sufficient power the FET can be used from sub-mm wave to beyond far-infrared frequency range. Current and voltage noise floor of the characterized TeraFET is 2.09 pA and 6.84 μV, respectively. This characteristic makes GaAs FETs more suitable for applications requiring higher frequencies, ultra-broadband capabilities and robustness in the THz domain, such as beam diagnostics and alignment at particle accelerators.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Yadav, Rahul ; Ludwig, Florian ; Faridi, Fahd Rushd ; Klopf, J. Michael ; Roskos, Hartmut G. ; Penirschke, Andreas ; Preu, Sascha |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | GaAs-based antenna-coupled field effect transistors as direct THz detectors across a wide frequency range from 0.2 to 29.8 THz |
| Sprache: | Englisch |
| Publikationsjahr: | 26 November 2024 |
| Ort: | Darmstadt |
| Publikationsdatum der Erstveröffentlichung: | 14 November 2024 |
| Ort der Erstveröffentlichung: | Washington, DC |
| Verlag: | OSA Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Optics Express |
| Jahrgang/Volume einer Zeitschrift: | 32 |
| (Heft-)Nummer: | 24 |
| Kollation: | 10 Seiten |
| DOI: | 10.26083/tuprints-00028728 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/28728 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | High-power coherent terahertz (THz) radiation from accelerator facilities such as free-electron lasers (FELs) is frequently used in pump-probe experiments where the pump or probe (or both) signals are intense THz pulses. Detectors for these applications have unique requirements that differ from those of low-power table-top systems. In this study, we demonstrate GaAs antenna-coupled field effect transistors (FETs) as a direct THz detector operating across a broad frequency spectrum ranging from 0.2 THz to 29.8 THz. At approximately 0.5 THz, the maximum current responsivity (ℜ_I) of 0.59 mA/W is observed, signifying a noise equivalent power (NEP) of 2.27 nW/√Hz . We report an empirical roll-off of f^(−3) for an antenna-coupled GaAs TeraFET detector. Still, NEP of 0.94 μW/√Hz and a current responsivity ℜ_I = 1.7 μA/W is observed at 29.8 THz, indicating that with sufficient power the FET can be used from sub-mm wave to beyond far-infrared frequency range. Current and voltage noise floor of the characterized TeraFET is 2.09 pA and 6.84 μV, respectively. This characteristic makes GaAs FETs more suitable for applications requiring higher frequencies, ultra-broadband capabilities and robustness in the THz domain, such as beam diagnostics and alignment at particle accelerators. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-287280 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 600 Technik, Medizin, angewandte Wissenschaften > 621.3 Elektrotechnik, Elektronik |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme |
| Hinterlegungsdatum: | 26 Nov 2024 14:02 |
| Letzte Änderung: | 28 Nov 2024 09:09 |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
- GaAs-based antenna-coupled field effect transistors as direct THz detectors across a wide frequency range from 0.2 to 29.8 THz. (deposited 26 Nov 2024 14:02) [Gegenwärtig angezeigt]
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