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Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response

Yadav, Rahul ; Penirschke, Andreas ; Preu, Sascha (2022)
Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response.
13th International Particle Accelerator Conference. Bangkok, Thailand (12.-17.06.2022)
doi: 10.18429/JACoW-IPAC2022-MOPOPT013
Konferenzveröffentlichung, Bibliographie

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Kurzbeschreibung (Abstract)

Room temperature terahertz (THz) detectors based on Field effect transistors (FETs) and Zero-bias Schottky diodes (SD) are prominent members for the temporal-spatial characterization of pulses down to the picosecond scale generated at particle accelerators. Comparative study of in house developed THz detectors both at higher and intermediate frequency (IF) is carried out using table top THz systems and commercially available sources. In this paper, we present high frequency and intermediate frequency (IF) response of Gallium Arsenide (GaAs) FET and Zero-bias Schottky diode THz detectors. The IF results obtained are helpful for understanding and designing of optimized IF circuit with broader bandwidth.

Typ des Eintrags: Konferenzveröffentlichung
Erschienen: 2022
Autor(en): Yadav, Rahul ; Penirschke, Andreas ; Preu, Sascha
Art des Eintrags: Bibliographie
Titel: Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response
Sprache: Englisch
Publikationsjahr: 2022
Ort: Darmstadt
Verlag: JACoW Publishing
(Heft-)Nummer: 13
Buchtitel: Proceedings of the 13th International Particle Accelerator Conference (IPAC'22)
Veranstaltungstitel: 13th International Particle Accelerator Conference
Veranstaltungsort: Bangkok, Thailand
Veranstaltungsdatum: 12.-17.06.2022
DOI: 10.18429/JACoW-IPAC2022-MOPOPT013
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Kurzbeschreibung (Abstract):

Room temperature terahertz (THz) detectors based on Field effect transistors (FETs) and Zero-bias Schottky diodes (SD) are prominent members for the temporal-spatial characterization of pulses down to the picosecond scale generated at particle accelerators. Comparative study of in house developed THz detectors both at higher and intermediate frequency (IF) is carried out using table top THz systems and commercially available sources. In this paper, we present high frequency and intermediate frequency (IF) response of Gallium Arsenide (GaAs) FET and Zero-bias Schottky diode THz detectors. The IF results obtained are helpful for understanding and designing of optimized IF circuit with broader bandwidth.

Freie Schlagworte: detector, experiment, electron, laser, photon
Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 621.3 Elektrotechnik, Elektronik
Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
Hinterlegungsdatum: 02 Aug 2024 12:54
Letzte Änderung: 02 Aug 2024 12:54
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