Yadav, Rahul ; Penirschke, Andreas ; Preu, Sascha (2022)
Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response.
13th International Particle Accelerator Conference. Bangkok, Thailand (12.-17.06.2022)
doi: 10.18429/JACoW-IPAC2022-MOPOPT013
Konferenzveröffentlichung, Bibliographie
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Kurzbeschreibung (Abstract)
Room temperature terahertz (THz) detectors based on Field effect transistors (FETs) and Zero-bias Schottky diodes (SD) are prominent members for the temporal-spatial characterization of pulses down to the picosecond scale generated at particle accelerators. Comparative study of in house developed THz detectors both at higher and intermediate frequency (IF) is carried out using table top THz systems and commercially available sources. In this paper, we present high frequency and intermediate frequency (IF) response of Gallium Arsenide (GaAs) FET and Zero-bias Schottky diode THz detectors. The IF results obtained are helpful for understanding and designing of optimized IF circuit with broader bandwidth.
Typ des Eintrags: | Konferenzveröffentlichung |
---|---|
Erschienen: | 2022 |
Autor(en): | Yadav, Rahul ; Penirschke, Andreas ; Preu, Sascha |
Art des Eintrags: | Bibliographie |
Titel: | Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response |
Sprache: | Englisch |
Publikationsjahr: | 2022 |
Ort: | Darmstadt |
Verlag: | JACoW Publishing |
(Heft-)Nummer: | 13 |
Buchtitel: | Proceedings of the 13th International Particle Accelerator Conference (IPAC'22) |
Veranstaltungstitel: | 13th International Particle Accelerator Conference |
Veranstaltungsort: | Bangkok, Thailand |
Veranstaltungsdatum: | 12.-17.06.2022 |
DOI: | 10.18429/JACoW-IPAC2022-MOPOPT013 |
Zugehörige Links: | |
Kurzbeschreibung (Abstract): | Room temperature terahertz (THz) detectors based on Field effect transistors (FETs) and Zero-bias Schottky diodes (SD) are prominent members for the temporal-spatial characterization of pulses down to the picosecond scale generated at particle accelerators. Comparative study of in house developed THz detectors both at higher and intermediate frequency (IF) is carried out using table top THz systems and commercially available sources. In this paper, we present high frequency and intermediate frequency (IF) response of Gallium Arsenide (GaAs) FET and Zero-bias Schottky diode THz detectors. The IF results obtained are helpful for understanding and designing of optimized IF circuit with broader bandwidth. |
Freie Schlagworte: | detector, experiment, electron, laser, photon |
Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 621.3 Elektrotechnik, Elektronik |
Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) |
Hinterlegungsdatum: | 02 Aug 2024 12:54 |
Letzte Änderung: | 02 Aug 2024 12:54 |
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Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response. (deposited 12 Jul 2023 13:08)
- Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response. (deposited 02 Aug 2024 12:54) [Gegenwärtig angezeigt]
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