Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha (2021)
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors.
International Workshop on Mobile Terahertz Systems (IWMTS). Essen, Germany (05.-06.07.2021)
doi: 10.1109/IWMTS51331.2021.9486796
Konferenzveröffentlichung, Bibliographie
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Kurzbeschreibung (Abstract)
Field effect transistor (FET) based terahertz rectifiers are promising candidates for sensitive, room-temperature operated high speed (THz) detectors, e.g. in communication, medical, biochemical, security, quality control applications, or beam diagnostic applications at particle accelerators. This paper investigates the equivalent circuit in the intermediate frequency band from 0.1 to 65 GHz with S-parameter measurements in order to enable implementation with high speed post detection electronics. Preliminary results are obtained by de-embedding On-Wafer measurements and compared with theoretical expectations from hall measurements and a simplified equivalent circuit. The knowledge of the channel behavior and impedance is mandatory for impedance matching to IF circuitry in advanced detector designs.
| Typ des Eintrags: | Konferenzveröffentlichung |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha |
| Art des Eintrags: | Bibliographie |
| Titel: | Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors |
| Sprache: | Englisch |
| Publikationsjahr: | 2021 |
| Ort: | Darmstadt |
| Verlag: | IEEE |
| Buchtitel: | 2021 Fourth International Workshop on Mobile Terahertz Systems (IWMTS) |
| Kollation: | 6 Seiten |
| Veranstaltungstitel: | International Workshop on Mobile Terahertz Systems (IWMTS) |
| Veranstaltungsort: | Essen, Germany |
| Veranstaltungsdatum: | 05.-06.07.2021 |
| DOI: | 10.1109/IWMTS51331.2021.9486796 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Field effect transistor (FET) based terahertz rectifiers are promising candidates for sensitive, room-temperature operated high speed (THz) detectors, e.g. in communication, medical, biochemical, security, quality control applications, or beam diagnostic applications at particle accelerators. This paper investigates the equivalent circuit in the intermediate frequency band from 0.1 to 65 GHz with S-parameter measurements in order to enable implementation with high speed post detection electronics. Preliminary results are obtained by de-embedding On-Wafer measurements and compared with theoretical expectations from hall measurements and a simplified equivalent circuit. The knowledge of the channel behavior and impedance is mandatory for impedance matching to IF circuitry in advanced detector designs. |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 621.3 Elektrotechnik, Elektronik |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) |
| Hinterlegungsdatum: | 02 Aug 2024 12:54 |
| Letzte Änderung: | 02 Aug 2024 12:54 |
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Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors. (deposited 12 Jul 2023 13:13)
- Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors. (deposited 02 Aug 2024 12:54) [Gegenwärtig angezeigt]
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