Yadav, Rahul ; Preu, Sascha ; Penirschke, Andreas (2022)
A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration.
Mediterrannean Microwave Symposium (MMS). Pizzo Calabro, Italy (09.-13.05.2022)
doi: 10.1109/MMS55062.2022.9825569
Konferenzveröffentlichung, Bibliographie
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Kurzbeschreibung (Abstract)
Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc. However, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S 31 with 14.45 GHz bandwidth below −10 dB and S 33 with 13.1 GHz bandwidth above −2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT).
Typ des Eintrags: | Konferenzveröffentlichung |
---|---|
Erschienen: | 2022 |
Autor(en): | Yadav, Rahul ; Preu, Sascha ; Penirschke, Andreas |
Art des Eintrags: | Bibliographie |
Titel: | A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration |
Sprache: | Englisch |
Publikationsjahr: | 2022 |
Ort: | Darmstadt |
Verlag: | IEEE |
Buchtitel: | 2022 Microwave Mediterranean Symposium (MMS) |
Kollation: | 4 Seiten |
Veranstaltungstitel: | Mediterrannean Microwave Symposium (MMS) |
Veranstaltungsort: | Pizzo Calabro, Italy |
Veranstaltungsdatum: | 09.-13.05.2022 |
DOI: | 10.1109/MMS55062.2022.9825569 |
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Kurzbeschreibung (Abstract): | Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc. However, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S 31 with 14.45 GHz bandwidth below −10 dB and S 33 with 13.1 GHz bandwidth above −2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT). |
Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 621.3 Elektrotechnik, Elektronik |
Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) |
Hinterlegungsdatum: | 02 Aug 2024 12:54 |
Letzte Änderung: | 02 Aug 2024 12:54 |
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A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration. (deposited 12 Jul 2023 13:18)
- A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration. (deposited 02 Aug 2024 12:54) [Gegenwärtig angezeigt]
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