Chang, Zheng ; Liu, Ke ; Sun, Zhehao ; Yuan, Kunpeng ; Cheng, Shuwen ; Gao, Yufei ; Zhang, Xiaoliang ; Shen, Chen ; Zhang, Hongbin ; Wang, Ning ; Tang, Dawei (2022)
First-principles investigation of the significant anisotropy and ultrahigh thermoelectric efficiency of a novel two-dimensional Ga₂I₂S₂ at room temperature.
In: International Journal of Extreme Manufacturing, 4 (2)
doi: 10.1088/2631-7990/ac5f0f
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Two-dimensional (2D) thermoelectric (TE) materials have been widely developed; however, some 2D materials exhibit isotropic phonon, electron transport properties, and poor TE performance, which limit their application scope. Thus, exploring excellent anisotropic and ultrahigh-performance TE materials are very warranted. Herein, we first investigate the phonon thermal and TE properties of a novel 2D-connectivity ternary compound named Ga₂I₂S₂ . This paper comprehensively studies the phonon dispersion, phonon anharmonicity, lattice thermal conductivity, electronic structure, carrier mobility, Seebeck coefficient, electrical conductivity, and the dimensionless figure of merit (ZT) versus carrier concentration for 2D Ga₂I₂S₂ . We conclude that the in-plane lattice thermal conductivities of Ga₂I₂S₂ at room temperature (300 K) are found to be 1.55 W mK⁻¹ in the X-axis direction (xx-direction) and 3.82 W mK⁻¹ in the Y-axis direction (yy-direction), which means its anisotropy ratio reaches 1.46. Simultaneously, the TE performance of p-type and n-type doping 2D Ga₂I₂S₂ also shows significant anisotropy, giving rise to the ZT peak values of p-type doping in xx- and yy-directions being 0.81 and 1.99, respectively, and those of n-type doping reach ultrahigh values of 7.12 and 2.89 at 300 K, which are obviously higher than the reported values for p-type and n-type doping ternary compound Sn₂BiX (ZT∼ 1.70 and ∼2.45 at 300 K) (2020 Nano Energy 67 104283). This work demonstrates that 2D Ga₂I₂S₂ has high anisotropic TE conversion efficiency and can also be used as a new potential room-temperature TE material.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Chang, Zheng ; Liu, Ke ; Sun, Zhehao ; Yuan, Kunpeng ; Cheng, Shuwen ; Gao, Yufei ; Zhang, Xiaoliang ; Shen, Chen ; Zhang, Hongbin ; Wang, Ning ; Tang, Dawei |
| Art des Eintrags: | Bibliographie |
| Titel: | First-principles investigation of the significant anisotropy and ultrahigh thermoelectric efficiency of a novel two-dimensional Ga₂I₂S₂ at room temperature |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Ort: | Darmstadt |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | International Journal of Extreme Manufacturing |
| Jahrgang/Volume einer Zeitschrift: | 4 |
| (Heft-)Nummer: | 2 |
| Kollation: | 13 Seiten |
| DOI: | 10.1088/2631-7990/ac5f0f |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Two-dimensional (2D) thermoelectric (TE) materials have been widely developed; however, some 2D materials exhibit isotropic phonon, electron transport properties, and poor TE performance, which limit their application scope. Thus, exploring excellent anisotropic and ultrahigh-performance TE materials are very warranted. Herein, we first investigate the phonon thermal and TE properties of a novel 2D-connectivity ternary compound named Ga₂I₂S₂ . This paper comprehensively studies the phonon dispersion, phonon anharmonicity, lattice thermal conductivity, electronic structure, carrier mobility, Seebeck coefficient, electrical conductivity, and the dimensionless figure of merit (ZT) versus carrier concentration for 2D Ga₂I₂S₂ . We conclude that the in-plane lattice thermal conductivities of Ga₂I₂S₂ at room temperature (300 K) are found to be 1.55 W mK⁻¹ in the X-axis direction (xx-direction) and 3.82 W mK⁻¹ in the Y-axis direction (yy-direction), which means its anisotropy ratio reaches 1.46. Simultaneously, the TE performance of p-type and n-type doping 2D Ga₂I₂S₂ also shows significant anisotropy, giving rise to the ZT peak values of p-type doping in xx- and yy-directions being 0.81 and 1.99, respectively, and those of n-type doping reach ultrahigh values of 7.12 and 2.89 at 300 K, which are obviously higher than the reported values for p-type and n-type doping ternary compound Sn₂BiX (ZT∼ 1.70 and ∼2.45 at 300 K) (2020 Nano Energy 67 104283). This work demonstrates that 2D Ga₂I₂S₂ has high anisotropic TE conversion efficiency and can also be used as a new potential room-temperature TE material. |
| Freie Schlagworte: | thermoelectricity, strong anisotropy, two-dimensional materials, room temperature, first-principles calculation |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 540 Chemie 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft |
| Hinterlegungsdatum: | 02 Aug 2024 12:42 |
| Letzte Änderung: | 02 Aug 2024 12:42 |
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| Suche nach Titel in: | TUfind oder in Google |
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First-principles investigation of the significant anisotropy and ultrahigh thermoelectric efficiency of a novel two-dimensional Ga₂I₂S₂ at room temperature. (deposited 13 Jul 2022 12:46)
- First-principles investigation of the significant anisotropy and ultrahigh thermoelectric efficiency of a novel two-dimensional Ga₂I₂S₂ at room temperature. (deposited 02 Aug 2024 12:42) [Gegenwärtig angezeigt]
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