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Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film

Kurdi, Samer ; Sakuraba, Yuya ; Masuda, Keisuke ; Tajiri, Hiroo ; Nair, Bhaskaran ; Nataf, Guillaume F. ; Vickers, Mary E. ; Reiss, Günter ; Meinert, Markus ; Dhesi, Sarnjeet S. ; Ghidini, Massimo ; Barber, Zoe H. (2022)
Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film.
In: Journal of Physics D: Applied Physics, 55 (18)
doi: 10.1088/1361-6463/ac4e32
Artikel, Bibliographie

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Kurzbeschreibung (Abstract)

In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn₂FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using x-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L2₁ B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our x-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated for the L2₁ B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L2₁ B structure. To realize a half-metallic Mn₂FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder.

Typ des Eintrags: Artikel
Erschienen: 2022
Autor(en): Kurdi, Samer ; Sakuraba, Yuya ; Masuda, Keisuke ; Tajiri, Hiroo ; Nair, Bhaskaran ; Nataf, Guillaume F. ; Vickers, Mary E. ; Reiss, Günter ; Meinert, Markus ; Dhesi, Sarnjeet S. ; Ghidini, Massimo ; Barber, Zoe H.
Art des Eintrags: Bibliographie
Titel: Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film
Sprache: Englisch
Publikationsjahr: 2022
Ort: Darmstadt
Verlag: IOP Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Physics D: Applied Physics
Jahrgang/Volume einer Zeitschrift: 55
(Heft-)Nummer: 18
Kollation: 10 Seiten
DOI: 10.1088/1361-6463/ac4e32
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Kurzbeschreibung (Abstract):

In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn₂FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using x-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L2₁ B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our x-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated for the L2₁ B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L2₁ B structure. To realize a half-metallic Mn₂FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder.

Freie Schlagworte: Heusler alloy, spintronics, x-ray absorption spectroscopy, x-ray diffraction, x-ray magnetic circular dichroism, spin polarization, thin films
Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
500 Naturwissenschaften und Mathematik > 540 Chemie
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau
Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik
Hinterlegungsdatum: 02 Aug 2024 12:42
Letzte Änderung: 02 Aug 2024 12:42
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