Bauknecht, Andreas ; Blieske, U. ; Kampschulte, T. ; Albert, J. ; Sehnert, H. ; Lux-Steiner, Martha Ch. ; Klein, Andreas ; Jaegermann, Wolfram (1999)
Band offsets at the ZnSe/CuGaSe₂(001) heterointerface.
In: Applied Physics Letters, 74 (8)
doi: 10.1063/1.123455
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe₂(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be ΔEV=0.6±0.1 eV. As a consequence, a nearly symmetric "type-I" band alignment for the ZnSe/CuGaSe₂ heterojunction with a conduction-band offset of ΔEC=0.4±0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe₂-based thin-film solar cells.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 1999 |
| Autor(en): | Bauknecht, Andreas ; Blieske, U. ; Kampschulte, T. ; Albert, J. ; Sehnert, H. ; Lux-Steiner, Martha Ch. ; Klein, Andreas ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | Band offsets at the ZnSe/CuGaSe₂(001) heterointerface |
| Sprache: | Englisch |
| Publikationsjahr: | 1999 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 74 |
| (Heft-)Nummer: | 8 |
| DOI: | 10.1063/1.123455 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe₂(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be ΔEV=0.6±0.1 eV. As a consequence, a nearly symmetric "type-I" band alignment for the ZnSe/CuGaSe₂ heterojunction with a conduction-band offset of ΔEC=0.4±0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe₂-based thin-film solar cells. |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 02 Aug 2024 12:37 |
| Letzte Änderung: | 02 Aug 2024 12:37 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
-
Band offsets at the ZnSe/CuGaSe₂(001) heterointerface. (deposited 08 Nov 2021 12:10)
- Band offsets at the ZnSe/CuGaSe₂(001) heterointerface. (deposited 02 Aug 2024 12:37) [Gegenwärtig angezeigt]
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum