Auth, Dominik ; Liu, Songtao ; Norman, Justin ; Edward Bowers, John ; Breuer, Stefan (2019)
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width.
In: Optics Express, 27 (19)
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or inter-mode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 400 Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a −3 dB criteria, containing more than 100 comb carriers.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Auth, Dominik ; Liu, Songtao ; Norman, Justin ; Edward Bowers, John ; Breuer, Stefan |
| Art des Eintrags: | Bibliographie |
| Titel: | Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width |
| Sprache: | Englisch |
| Publikationsjahr: | 2019 |
| Verlag: | OSA Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Optics Express |
| Jahrgang/Volume einer Zeitschrift: | 27 |
| (Heft-)Nummer: | 19 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or inter-mode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 400 Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a −3 dB criteria, containing more than 100 comb carriers. |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 05 Fachbereich Physik 05 Fachbereich Physik > Institut für Angewandte Physik 05 Fachbereich Physik > Institut für Angewandte Physik > Halbleiter Optik |
| Hinterlegungsdatum: | 02 Aug 2024 12:34 |
| Letzte Änderung: | 02 Aug 2024 12:34 |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
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Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width. (deposited 15 Dez 2019 20:55)
- Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width. (deposited 02 Aug 2024 12:34) [Gegenwärtig angezeigt]
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