Auth, D. ; Korenev, V. V. ; Savelyev, A. V. ; Maximov, M. V. ; Zhukov, A. E. ; Breuer, S. (2020)
Passive mode-locking of p-doped quantum dot semiconductor lasers.
In: Journal of Physics: Conference Series, 1695
doi: 10.1088/1742-6596/1695/1/012068
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Quantum dot based monolithic edge-emitting semiconductor lasers at 1.25 µm are ideal sources for the generation of broad optical frequency combs for optical communication applications. In this work, InAs/InGaAs quantum dot lasers with different total laser length to absorber length ratio and with different p-doping concentrations in the GaAs barrier sections are investigated experimentally in dependence on the gain injection current and absorber reverse bias voltage. A smaller mode-locking area is found for the p-doped device in dependence on the laser biasing conditions. For the undoped active region 1.3 ps short pulse widths at a pulse repetition rate of 20 GHz with a pulse-to-pulse timing jitter of 111 fs are reported for an absorber section length of 12% to the total cavity length. For an undoped and p-doped device short pulse emission between 2.5 ps and 5.5 ps is attained and a shorter absorber section length of 8% or 5%.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Auth, D. ; Korenev, V. V. ; Savelyev, A. V. ; Maximov, M. V. ; Zhukov, A. E. ; Breuer, S. |
| Art des Eintrags: | Bibliographie |
| Titel: | Passive mode-locking of p-doped quantum dot semiconductor lasers |
| Sprache: | Englisch |
| Publikationsjahr: | 28 Dezember 2020 |
| Ort: | Bristol |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics: Conference Series |
| Jahrgang/Volume einer Zeitschrift: | 1695 |
| Kollation: | 6 Seiten |
| DOI: | 10.1088/1742-6596/1695/1/012068 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Quantum dot based monolithic edge-emitting semiconductor lasers at 1.25 µm are ideal sources for the generation of broad optical frequency combs for optical communication applications. In this work, InAs/InGaAs quantum dot lasers with different total laser length to absorber length ratio and with different p-doping concentrations in the GaAs barrier sections are investigated experimentally in dependence on the gain injection current and absorber reverse bias voltage. A smaller mode-locking area is found for the p-doped device in dependence on the laser biasing conditions. For the undoped active region 1.3 ps short pulse widths at a pulse repetition rate of 20 GHz with a pulse-to-pulse timing jitter of 111 fs are reported for an absorber section length of 12% to the total cavity length. For an undoped and p-doped device short pulse emission between 2.5 ps and 5.5 ps is attained and a shorter absorber section length of 8% or 5%. |
| ID-Nummer: | Artikel-ID: 012068 |
| Zusätzliche Informationen: | 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation; Erstveröffentlichung |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 05 Fachbereich Physik 05 Fachbereich Physik > Institut für Angewandte Physik |
| Hinterlegungsdatum: | 02 Aug 2024 07:05 |
| Letzte Änderung: | 02 Aug 2024 07:05 |
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| Suche nach Titel in: | TUfind oder in Google |
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Passive mode-locking of p-doped quantum dot semiconductor lasers. (deposited 29 Jul 2024 09:45)
- Passive mode-locking of p-doped quantum dot semiconductor lasers. (deposited 02 Aug 2024 07:05) [Gegenwärtig angezeigt]
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