Molina-Luna, Leopoldo (2024)
Towards atomic-scale investigation of resistive switching in memristive systems via MEMS-based in situ electron microscopy.
In: Microscopy and Microanalysis, 30 (Suppl. 1)
doi: 10.1093/mam/ozae044.781
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Due to the physical and technological limits of the current silicon semiconductor technology (i.e., DRAM, EEPROM, and Flash), the total expenditure of computing will surpass the world’s energy production by 2040, according to the Semiconductor Industry Association [1], hence more energetically and computationally efficient computing technologies are required. Resistive Random Access Memory (RRAM) is promising, as these memristive systems can not only be used for more efficient non-volatile memory applications, but are also found in logic circuits with integrated memory and neuromorphic architectures.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Molina-Luna, Leopoldo |
| Art des Eintrags: | Bibliographie |
| Titel: | Towards atomic-scale investigation of resistive switching in memristive systems via MEMS-based in situ electron microscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 24 Juli 2024 |
| Verlag: | Oxford University Press |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Microscopy and Microanalysis |
| Jahrgang/Volume einer Zeitschrift: | 30 |
| (Heft-)Nummer: | Suppl. 1 |
| DOI: | 10.1093/mam/ozae044.781 |
| Kurzbeschreibung (Abstract): | Due to the physical and technological limits of the current silicon semiconductor technology (i.e., DRAM, EEPROM, and Flash), the total expenditure of computing will surpass the world’s energy production by 2040, according to the Semiconductor Industry Association [1], hence more energetically and computationally efficient computing technologies are required. Resistive Random Access Memory (RRAM) is promising, as these memristive systems can not only be used for more efficient non-volatile memory applications, but are also found in logic circuits with integrated memory and neuromorphic architectures. |
| Zusätzliche Informationen: | Physical Sciences Symposia: Advances in In Situ TEM Characterization of Dynamic Processes in Materials |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenmikroskopie |
| Hinterlegungsdatum: | 31 Jul 2024 06:50 |
| Letzte Änderung: | 31 Jul 2024 06:50 |
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