Sayyadi-Shahraki, Ahmad ; Frömling, Till (2024)
Piezotronically tuned photosensitivity in ZnO varistor-type interface devices.
In: Nano Energy, 128
doi: 10.1016/j.nanoen.2024.109968
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The study of piezotronic and piezo-phototronic features in semiconducting piezoelectrics has gained considerable attention for optimizing electronic and optoelectronic device performance. In this study, we explore the photocurrent response within a ZnO varistor-type interface device and examine its UV photosensitivity enhancement through piezo-phototronic modulation of the potential barriers at grain boundaries. Doped ZnO bicrystals were synthesized using the epitaxial solid-state transformation method with polarization vectors perpendicular to the interface. The vectors can be directed both into and out of the interfaces depending on the crystallographic orientation of the crystals designated as (0001)|(0001) and (0001)|(0001) interfaces, respectively. These varistortype boundaries demonstrate an exceptional photoelectric response to UV photons. Furthermore, our results indicate that the photoresponsivity of bicrystals with (0001)|(0001) crystallographic orientation can be further enhanced under piezo-phototronic influence. Application of compressive stress of 100 MPa not only increased photocurrent formation by 1000 % but also boosted photosensitivity by 1400 %, attributed to the elevated double Schottky barrier (DSB) height at the interface resulting from mechanical loading on the bicrystal. Our findings highlight the significant role of piezoelectrically tuned potential barriers at grain boundaries in enhancing the separation and extraction of photogenerated excitons for photocurrent formation. This study introduces the engineered varistor-type interface as a promising candidate for future optoelectronic devices and contributes to our understanding of the piezo-phototronic concept in semiconductor interface devices.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2024 |
Autor(en): | Sayyadi-Shahraki, Ahmad ; Frömling, Till |
Art des Eintrags: | Bibliographie |
Titel: | Piezotronically tuned photosensitivity in ZnO varistor-type interface devices |
Sprache: | Englisch |
Publikationsjahr: | 5 Juli 2024 |
Verlag: | Elsevier |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nano Energy |
Jahrgang/Volume einer Zeitschrift: | 128 |
DOI: | 10.1016/j.nanoen.2024.109968 |
Kurzbeschreibung (Abstract): | The study of piezotronic and piezo-phototronic features in semiconducting piezoelectrics has gained considerable attention for optimizing electronic and optoelectronic device performance. In this study, we explore the photocurrent response within a ZnO varistor-type interface device and examine its UV photosensitivity enhancement through piezo-phototronic modulation of the potential barriers at grain boundaries. Doped ZnO bicrystals were synthesized using the epitaxial solid-state transformation method with polarization vectors perpendicular to the interface. The vectors can be directed both into and out of the interfaces depending on the crystallographic orientation of the crystals designated as (0001)|(0001) and (0001)|(0001) interfaces, respectively. These varistortype boundaries demonstrate an exceptional photoelectric response to UV photons. Furthermore, our results indicate that the photoresponsivity of bicrystals with (0001)|(0001) crystallographic orientation can be further enhanced under piezo-phototronic influence. Application of compressive stress of 100 MPa not only increased photocurrent formation by 1000 % but also boosted photosensitivity by 1400 %, attributed to the elevated double Schottky barrier (DSB) height at the interface resulting from mechanical loading on the bicrystal. Our findings highlight the significant role of piezoelectrically tuned potential barriers at grain boundaries in enhancing the separation and extraction of photogenerated excitons for photocurrent formation. This study introduces the engineered varistor-type interface as a promising candidate for future optoelectronic devices and contributes to our understanding of the piezo-phototronic concept in semiconductor interface devices. |
Freie Schlagworte: | interface, piezo-phototronic ZnO-based varistor, double Schottky barrier, photosensitivity |
ID-Nummer: | Artikel-ID: 109968 |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe |
Hinterlegungsdatum: | 24 Jul 2024 08:40 |
Letzte Änderung: | 24 Jul 2024 12:11 |
PPN: | 520116631 |
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Suche nach Titel in: | TUfind oder in Google |
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