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Indications on self mode-locking in a broad area single-section quantum dot laser

Auth, D. ; Korenev, V. V. ; Savelyev, A. V. ; Maximov, M. V. ; Zhukov, A. E. ; Breuer, S. (2019)
Indications on self mode-locking in a broad area single-section quantum dot laser.
In: Journal of Physics: Conference Series, 1410
doi: 10.1088/1742-6596/1410/1/012084
Artikel, Bibliographie

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Kurzbeschreibung (Abstract)

Broad-area edge-emitting monolithic mode-locked semiconductor quantum dot lasers emitting at 1.26 μm could potentially serve as ideal sources for the generation of high power broad optical frequency combs for short-reach inter and intra data-center links. In this contribution, the inter-mode beat frequency of a 2 mm long InAs/InGaAs quantum dot laser with a broad-ridge waveguide are studied experimentally. Laser output power, radio-frequency and spectral domain analysis is performed. -3 dB spectral widths ranging from 2nm to 5.3 nm and the existence of an inter-mode beat frequency at 20.4 GHz with a signal-to-noise ratio from 2 dB up to 11 dB are experimentally confirmed for injection currents from 0.225 A to 1 A. Our results indicate a potential way towards high output power optical frequency comb generation by electrically injected monolithic semiconductor lasers.

Typ des Eintrags: Artikel
Erschienen: 2019
Autor(en): Auth, D. ; Korenev, V. V. ; Savelyev, A. V. ; Maximov, M. V. ; Zhukov, A. E. ; Breuer, S.
Art des Eintrags: Bibliographie
Titel: Indications on self mode-locking in a broad area single-section quantum dot laser
Sprache: Englisch
Publikationsjahr: 2019
Ort: Bristol
Verlag: IOP Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Physics: Conference Series
Jahrgang/Volume einer Zeitschrift: 1410
Kollation: 4 Seiten
DOI: 10.1088/1742-6596/1410/1/012084
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Kurzbeschreibung (Abstract):

Broad-area edge-emitting monolithic mode-locked semiconductor quantum dot lasers emitting at 1.26 μm could potentially serve as ideal sources for the generation of high power broad optical frequency combs for short-reach inter and intra data-center links. In this contribution, the inter-mode beat frequency of a 2 mm long InAs/InGaAs quantum dot laser with a broad-ridge waveguide are studied experimentally. Laser output power, radio-frequency and spectral domain analysis is performed. -3 dB spectral widths ranging from 2nm to 5.3 nm and the existence of an inter-mode beat frequency at 20.4 GHz with a signal-to-noise ratio from 2 dB up to 11 dB are experimentally confirmed for injection currents from 0.225 A to 1 A. Our results indicate a potential way towards high output power optical frequency comb generation by electrically injected monolithic semiconductor lasers.

ID-Nummer: Artikel-ID: 012084
Zusätzliche Informationen:

6th International School and Conference “Saint Petersburg OPEN 2019”: Optoelectronics, Photonics, Engineering and Nanostructures 22–25 April 2019, Saint Petersburg, Russian Federation

Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
Fachbereich(e)/-gebiet(e): 05 Fachbereich Physik
05 Fachbereich Physik > Institut für Angewandte Physik
Hinterlegungsdatum: 17 Jun 2024 12:47
Letzte Änderung: 17 Jun 2024 12:47
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