Auth, D. ; Korenev, V. V. ; Savelyev, A. V. ; Maximov, M. V. ; Zhukov, A. E. ; Breuer, S. (2019)
Indications on self mode-locking in a broad area single-section quantum dot laser.
In: Journal of Physics: Conference Series, 1410
doi: 10.1088/1742-6596/1410/1/012084
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Broad-area edge-emitting monolithic mode-locked semiconductor quantum dot lasers emitting at 1.26 μm could potentially serve as ideal sources for the generation of high power broad optical frequency combs for short-reach inter and intra data-center links. In this contribution, the inter-mode beat frequency of a 2 mm long InAs/InGaAs quantum dot laser with a broad-ridge waveguide are studied experimentally. Laser output power, radio-frequency and spectral domain analysis is performed. -3 dB spectral widths ranging from 2nm to 5.3 nm and the existence of an inter-mode beat frequency at 20.4 GHz with a signal-to-noise ratio from 2 dB up to 11 dB are experimentally confirmed for injection currents from 0.225 A to 1 A. Our results indicate a potential way towards high output power optical frequency comb generation by electrically injected monolithic semiconductor lasers.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2019 |
Autor(en): | Auth, D. ; Korenev, V. V. ; Savelyev, A. V. ; Maximov, M. V. ; Zhukov, A. E. ; Breuer, S. |
Art des Eintrags: | Bibliographie |
Titel: | Indications on self mode-locking in a broad area single-section quantum dot laser |
Sprache: | Englisch |
Publikationsjahr: | 2019 |
Ort: | Bristol |
Verlag: | IOP Publishing |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics: Conference Series |
Jahrgang/Volume einer Zeitschrift: | 1410 |
Kollation: | 4 Seiten |
DOI: | 10.1088/1742-6596/1410/1/012084 |
Zugehörige Links: | |
Kurzbeschreibung (Abstract): | Broad-area edge-emitting monolithic mode-locked semiconductor quantum dot lasers emitting at 1.26 μm could potentially serve as ideal sources for the generation of high power broad optical frequency combs for short-reach inter and intra data-center links. In this contribution, the inter-mode beat frequency of a 2 mm long InAs/InGaAs quantum dot laser with a broad-ridge waveguide are studied experimentally. Laser output power, radio-frequency and spectral domain analysis is performed. -3 dB spectral widths ranging from 2nm to 5.3 nm and the existence of an inter-mode beat frequency at 20.4 GHz with a signal-to-noise ratio from 2 dB up to 11 dB are experimentally confirmed for injection currents from 0.225 A to 1 A. Our results indicate a potential way towards high output power optical frequency comb generation by electrically injected monolithic semiconductor lasers. |
ID-Nummer: | Artikel-ID: 012084 |
Zusätzliche Informationen: | 6th International School and Conference “Saint Petersburg OPEN 2019”: Optoelectronics, Photonics, Engineering and Nanostructures 22–25 April 2019, Saint Petersburg, Russian Federation |
Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
Fachbereich(e)/-gebiet(e): | 05 Fachbereich Physik 05 Fachbereich Physik > Institut für Angewandte Physik |
Hinterlegungsdatum: | 17 Jun 2024 12:47 |
Letzte Änderung: | 17 Jun 2024 12:47 |
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Indications on self mode-locking in a broad area single-section quantum dot laser. (deposited 11 Jun 2024 09:12)
- Indications on self mode-locking in a broad area single-section quantum dot laser. (deposited 17 Jun 2024 12:47) [Gegenwärtig angezeigt]
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