Molinari, Alan ; Witte, Ralf ; Neelisetty, Krishna Kanth ; Gorji, Saleh ; Kübel, Christian ; Münch, Ingo ; Wöhler, Franziska ; Hahn, Lothar ; Hengsbach, Stefan ; Bade, Klaus ; Hahn, Horst ; Kruk, Robert (2020)
Configurable resistive response in BaTiO3 ferroelectric memristors via electron beam radiation.
In: Advanced Materials, 32 (12)
doi: 10.1002/adma.201907541
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Ferroelectric oxide memristors are currently in the highlights of a thriving area of research aiming at the development of nonvolatile, adaptive memories for applications in neuromorphic computing. However, to date a precise control of synapse-like functionalities by adjusting the interplay between ferroelectric polarization and resistive switching processes is still an ongoing challenge. Here, it is shown that by means of controlled electron beam radiation, a prototypical ferroelectric film of BaTiO3 can be turned into a memristor with multiple configurable resistance states. Ex situ and in situ analyses of current/voltage characteristics upon electron beam exposure confirm the quasi-continuous variation of BaTiO3 resistance up to two orders of magnitude under the typical experimental conditions employed in electron beam patterning and characterization techniques. These results demonstrate an unprecedented effective route to locally and scalably engineering multilevel ferroelectric memristors via application of moderate electron beam radiation.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Molinari, Alan ; Witte, Ralf ; Neelisetty, Krishna Kanth ; Gorji, Saleh ; Kübel, Christian ; Münch, Ingo ; Wöhler, Franziska ; Hahn, Lothar ; Hengsbach, Stefan ; Bade, Klaus ; Hahn, Horst ; Kruk, Robert |
| Art des Eintrags: | Bibliographie |
| Titel: | Configurable resistive response in BaTiO3 ferroelectric memristors via electron beam radiation |
| Sprache: | Englisch |
| Publikationsjahr: | März 2020 |
| Verlag: | Wiley-VCH |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Advanced Materials |
| Jahrgang/Volume einer Zeitschrift: | 32 |
| (Heft-)Nummer: | 12 |
| DOI: | 10.1002/adma.201907541 |
| Kurzbeschreibung (Abstract): | Ferroelectric oxide memristors are currently in the highlights of a thriving area of research aiming at the development of nonvolatile, adaptive memories for applications in neuromorphic computing. However, to date a precise control of synapse-like functionalities by adjusting the interplay between ferroelectric polarization and resistive switching processes is still an ongoing challenge. Here, it is shown that by means of controlled electron beam radiation, a prototypical ferroelectric film of BaTiO3 can be turned into a memristor with multiple configurable resistance states. Ex situ and in situ analyses of current/voltage characteristics upon electron beam exposure confirm the quasi-continuous variation of BaTiO3 resistance up to two orders of magnitude under the typical experimental conditions employed in electron beam patterning and characterization techniques. These results demonstrate an unprecedented effective route to locally and scalably engineering multilevel ferroelectric memristors via application of moderate electron beam radiation. |
| Freie Schlagworte: | BaTiO3, electron beam radiation, ferroelectric memristors, neuromorphic computing, thin film engineering |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > In-Situ Elektronenmikroskopie |
| Hinterlegungsdatum: | 12 Jun 2024 05:27 |
| Letzte Änderung: | 12 Jun 2024 05:27 |
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