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Structural and Chemical Properties of NiOₓ Thin Films: Oxygen Vacancy Formation in O₂ Atmosphere

Blume, Raoul ; Calvet, Wolfram ; Ghafari, Aliakbar ; Mayer, Thomas ; Knop‐Gericke, Axel ; Schlögl, Robert (2024)
Structural and Chemical Properties of NiOₓ Thin Films: Oxygen Vacancy Formation in O₂ Atmosphere.
In: ChemPhysChem, 2023, 24 (23)
doi: 10.26083/tuprints-00027228
Artikel, Zweitveröffentlichung, Verlagsversion

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Kurzbeschreibung (Abstract)

NiOₓ films on Si(111) were put in contact with oxygen at elevated temperatures. During heating and cooling in oxygen atmosphere Near Ambient Pressure (NAP)‐XPS and ‐XAS and work function (WF) measurements reveal the creation and replenishing of oxygen vacancies in dependence of temperature. Oxygen vacancies manifest themselves as a distinct O1s feature at 528.9 eV on the low binding energy side of the main NiO peak as well as by a distinct deviation of the Ni2p₃/₂ spectral features from the typical NiO spectra. DFT calculations reveal that the presence of oxygen vacancies leads to a charge redistribution and altered bond lengths of the atoms surrounding the vacancies causing the observed spectral changes. Furthermore, we observed that a broadening of the lowest energy peak in the O K‐edge spectra can be attributed to oxygen vacancies. In the presence of oxygen vacancies, the WF is lowered by 0.1 eV.

Typ des Eintrags: Artikel
Erschienen: 2024
Autor(en): Blume, Raoul ; Calvet, Wolfram ; Ghafari, Aliakbar ; Mayer, Thomas ; Knop‐Gericke, Axel ; Schlögl, Robert
Art des Eintrags: Zweitveröffentlichung
Titel: Structural and Chemical Properties of NiOₓ Thin Films: Oxygen Vacancy Formation in O₂ Atmosphere
Sprache: Englisch
Publikationsjahr: 27 Mai 2024
Ort: Darmstadt
Publikationsdatum der Erstveröffentlichung: 1 Dezember 2023
Ort der Erstveröffentlichung: Weinheim
Verlag: Wiley-VCH
Titel der Zeitschrift, Zeitung oder Schriftenreihe: ChemPhysChem
Jahrgang/Volume einer Zeitschrift: 24
(Heft-)Nummer: 23
Kollation: 11 Seiten
DOI: 10.26083/tuprints-00027228
URL / URN: https://tuprints.ulb.tu-darmstadt.de/27228
Zugehörige Links:
Herkunft: Zweitveröffentlichung DeepGreen
Kurzbeschreibung (Abstract):

NiOₓ films on Si(111) were put in contact with oxygen at elevated temperatures. During heating and cooling in oxygen atmosphere Near Ambient Pressure (NAP)‐XPS and ‐XAS and work function (WF) measurements reveal the creation and replenishing of oxygen vacancies in dependence of temperature. Oxygen vacancies manifest themselves as a distinct O1s feature at 528.9 eV on the low binding energy side of the main NiO peak as well as by a distinct deviation of the Ni2p₃/₂ spectral features from the typical NiO spectra. DFT calculations reveal that the presence of oxygen vacancies leads to a charge redistribution and altered bond lengths of the atoms surrounding the vacancies causing the observed spectral changes. Furthermore, we observed that a broadening of the lowest energy peak in the O K‐edge spectra can be attributed to oxygen vacancies. In the presence of oxygen vacancies, the WF is lowered by 0.1 eV.

Alternatives oder übersetztes Abstract:
Alternatives AbstractSprache

The formation and properties of oxygen vacancies on thin NiOₓ films were investigated in situ at elevated temperatures and high oxygen pressures. Due to charge redistribution and altered bond lengths of the atoms surrounding the oxygen vacancies, they appear as distinct spectral features in O1s and O K-edge spectra, clearly distinguishable from all other peaks.

Englisch
Freie Schlagworte: adsorption, nickel, oxide, oxygen, vacancy
ID-Nummer: Artikel-ID: e202300231
Status: Verlagsversion
URN: urn:nbn:de:tuda-tuprints-272284
Zusätzliche Informationen:

An invited contribution to a Special Collection on Synchrotron-Based Photoand Physical Chemistr

Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
500 Naturwissenschaften und Mathematik > 540 Chemie
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Hinterlegungsdatum: 27 Mai 2024 13:06
Letzte Änderung: 28 Mai 2024 06:45
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