Romanyuk, O. ; Paszuk, A. ; Gordeev, I. ; Wilks, R.G. ; Ueda, S. ; Hartmann, C. ; Félix, R. ; Bär, M. ; Schlueter, C. ; Gloskovskii, A. ; Bartoš, I. ; Nandy, M. ; Houdková, J. ; Jiříček, P. ; Jaegermann, W. ; Hofmann, J. P. ; Hannappel, T. (2022)
Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams.
In: Applied Surface Science, 605
doi: 10.1016/j.apsusc.2022.154630
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The epitaxial growth of the polar GaP(1 0 0) on the nonpolar Si(1 0 0) substrate suffers from inevitable defects at the antiphase domain boundaries (APDs), resulting from mono-atomic steps on the Si(1 0 0) surface. Stabilization of Si(1 0 0) substrate surfaces with As is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4–50-nm-thick GaP epitaxial films were grown on As-terminated Si(1 0 0) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy (MOVPE). The GaP(As)/Si(1 0 0) heterostructures were investigated by X-ray photoelectron spectroscopy (XPS) combined with gas cluster ion beam (GCIB) sputtering and by hard X-ray photoelectron spectroscopy (HAXPES). We found residuals of As atoms in the GaP lattice (∼0.2–0.3 at.%) and a localization of As atoms at the GaP(As)/Si(1 0 0) interface (∼1 at.%). Deconvolution of core level peaks revealed interface core level shifts. In As core levels, chemical shifts between 0.5 and 0.8 eV were measured and identified by angle-resolved XPS measurements. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the GaP(As)/Si(1 0 0) heterostructure was deduced.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2022 |
Autor(en): | Romanyuk, O. ; Paszuk, A. ; Gordeev, I. ; Wilks, R.G. ; Ueda, S. ; Hartmann, C. ; Félix, R. ; Bär, M. ; Schlueter, C. ; Gloskovskii, A. ; Bartoš, I. ; Nandy, M. ; Houdková, J. ; Jiříček, P. ; Jaegermann, W. ; Hofmann, J. P. ; Hannappel, T. |
Art des Eintrags: | Bibliographie |
Titel: | Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams |
Sprache: | Englisch |
Publikationsjahr: | 2022 |
Ort: | Amsterdam |
Verlag: | Elsevier |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Surface Science |
Jahrgang/Volume einer Zeitschrift: | 605 |
Kollation: | 11 Seiten |
DOI: | 10.1016/j.apsusc.2022.154630 |
Kurzbeschreibung (Abstract): | The epitaxial growth of the polar GaP(1 0 0) on the nonpolar Si(1 0 0) substrate suffers from inevitable defects at the antiphase domain boundaries (APDs), resulting from mono-atomic steps on the Si(1 0 0) surface. Stabilization of Si(1 0 0) substrate surfaces with As is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4–50-nm-thick GaP epitaxial films were grown on As-terminated Si(1 0 0) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy (MOVPE). The GaP(As)/Si(1 0 0) heterostructures were investigated by X-ray photoelectron spectroscopy (XPS) combined with gas cluster ion beam (GCIB) sputtering and by hard X-ray photoelectron spectroscopy (HAXPES). We found residuals of As atoms in the GaP lattice (∼0.2–0.3 at.%) and a localization of As atoms at the GaP(As)/Si(1 0 0) interface (∼1 at.%). Deconvolution of core level peaks revealed interface core level shifts. In As core levels, chemical shifts between 0.5 and 0.8 eV were measured and identified by angle-resolved XPS measurements. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the GaP(As)/Si(1 0 0) heterostructure was deduced. |
ID-Nummer: | Artikel-ID: 154630 |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
Hinterlegungsdatum: | 10 Mai 2024 13:10 |
Letzte Änderung: | 10 Mai 2024 13:10 |
PPN: | 518191761 |
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