Klein, Andreas ; Frebel, Alexander ; Creutz, Kim Alexander ; Huang, Binxiang (2024)
Origin and quantification of the ultimate carrier concentration limits in In2O3 and Sn-doped In2O3.
In: Physical Review Materials, 8 (4)
doi: 10.1103/PhysRevMaterials.8.044601
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The ultimate limits of the carrier concentrations in In2O3 and Sn-doped In2O3 are derived from operando photoelectron spectroscopy of a solid oxide electrochemical cell with Y-doped ZrO2 as the oxygen electrolyte. It is demonstrated that the limits are determined by the transition of the oxygen vacancy to the neutral state and to the reduction of Sn4+ donors to Sn2+ electron traps, respectively. Maximum Fermi energies of 3.85 and 3.35eV above the valence band maximum are identified for ITO and In2O3. The ultimate carrier concentrations achievable by Sn doping and by oxygen vacancies are estimated to be 1.8–1.9×1021cm−3 and 6–7×1020cm−3.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Klein, Andreas ; Frebel, Alexander ; Creutz, Kim Alexander ; Huang, Binxiang |
| Art des Eintrags: | Bibliographie |
| Titel: | Origin and quantification of the ultimate carrier concentration limits in In2O3 and Sn-doped In2O3 |
| Sprache: | Englisch |
| Publikationsjahr: | 1 April 2024 |
| Verlag: | American Physical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review Materials |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| (Heft-)Nummer: | 4 |
| DOI: | 10.1103/PhysRevMaterials.8.044601 |
| URL / URN: | https://journals.aps.org/prmaterials/abstract/10.1103/PhysRe... |
| Kurzbeschreibung (Abstract): | The ultimate limits of the carrier concentrations in In2O3 and Sn-doped In2O3 are derived from operando photoelectron spectroscopy of a solid oxide electrochemical cell with Y-doped ZrO2 as the oxygen electrolyte. It is demonstrated that the limits are determined by the transition of the oxygen vacancy to the neutral state and to the reduction of Sn4+ donors to Sn2+ electron traps, respectively. Maximum Fermi energies of 3.85 and 3.35eV above the valence band maximum are identified for ITO and In2O3. The ultimate carrier concentrations achievable by Sn doping and by oxygen vacancies are estimated to be 1.8–1.9×1021cm−3 and 6–7×1020cm−3. |
| Zusätzliche Informationen: | Artikel-ID: 044601 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenstruktur von Materialien DFG-Sonderforschungsbereiche (inkl. Transregio) DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 1548: FLAIR – Fermi Level Engineering Applied to Oxide Electroceramics |
| Hinterlegungsdatum: | 09 Apr 2024 06:19 |
| Letzte Änderung: | 09 Apr 2024 08:48 |
| PPN: | 516995979 |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum