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Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions

El-Said, A. S. ; Wilhelm, R. A. ; Heller, R. ; Akhmadaliev, Sh. ; Schumann, E. ; Sorokin, M. ; Facsko, S. ; Trautmann, C. (2016)
Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions.
In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 382
doi: 10.1016/j.nimb.2016.04.058
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV 129Xe(33–40)+ and with various swift heavy ions (SHI) of 30 MeV I9+ and 374 MeV–2.2 GeV 197Au25+. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.

Typ des Eintrags: Artikel
Erschienen: 2016
Autor(en): El-Said, A. S. ; Wilhelm, R. A. ; Heller, R. ; Akhmadaliev, Sh. ; Schumann, E. ; Sorokin, M. ; Facsko, S. ; Trautmann, C.
Art des Eintrags: Bibliographie
Titel: Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions
Sprache: Englisch
Publikationsjahr: 1 September 2016
Verlag: Elsevier
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Jahrgang/Volume einer Zeitschrift: 382
DOI: 10.1016/j.nimb.2016.04.058
Kurzbeschreibung (Abstract):

GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV 129Xe(33–40)+ and with various swift heavy ions (SHI) of 30 MeV I9+ and 374 MeV–2.2 GeV 197Au25+. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.

Freie Schlagworte: GaP, swift heavy ions, slow highly charged ions, nanostructures
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien
Hinterlegungsdatum: 11 Mär 2024 13:35
Letzte Änderung: 11 Mär 2024 13:35
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