Dietrich, Felix ; Ni, Fan ; Fulanović, Lovro ; Zhou, Xiandong ; Isaia, Daniel ; Groszewicz, Pedro B. ; Zhang, Chunlin ; Xu, Bai-Xiang ; Rödel, Jürgen ; Buntkowsky, Gerd ; Zhuo, Fangping (2024)
Effect of temperature on dislocation-tuned dielectricity and piezoelectricity in single-crystal BaTiO3.
In: Applied Physics Letters, 124
doi: 10.1063/5.0191394
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The pinning-controlled mobility of ferroelectric/ferroelastic domain walls is an important part of managing polarization switching and deter- mining the final properties of ferroelectric and piezoelectric materials. Here, we assess the impact of temperature on dislocation-induced domain wall pinning as well as on dislocation-tuned dielectric and piezoelectric response in barium titanate single crystals. Our solid-state nuclear magnetic resonance spectroscopy results indicate that the entire sample exclusively permits in-plane domains, with their distribution remaining insensitive to temperature changes below the Curie temperature (TC ). The domain wall pinning field monotonically decreases with increasing temperature up to TC , as evidenced by a combination of experimental observations and phase-field simulations. Our work high- lights the promising potential of dislocation engineering in controlling domain wall mobility within bulk ferroelectrics.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Dietrich, Felix ; Ni, Fan ; Fulanović, Lovro ; Zhou, Xiandong ; Isaia, Daniel ; Groszewicz, Pedro B. ; Zhang, Chunlin ; Xu, Bai-Xiang ; Rödel, Jürgen ; Buntkowsky, Gerd ; Zhuo, Fangping |
| Art des Eintrags: | Bibliographie |
| Titel: | Effect of temperature on dislocation-tuned dielectricity and piezoelectricity in single-crystal BaTiO3 |
| Sprache: | Englisch |
| Publikationsjahr: | 11 März 2024 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 124 |
| DOI: | 10.1063/5.0191394 |
| Kurzbeschreibung (Abstract): | The pinning-controlled mobility of ferroelectric/ferroelastic domain walls is an important part of managing polarization switching and deter- mining the final properties of ferroelectric and piezoelectric materials. Here, we assess the impact of temperature on dislocation-induced domain wall pinning as well as on dislocation-tuned dielectric and piezoelectric response in barium titanate single crystals. Our solid-state nuclear magnetic resonance spectroscopy results indicate that the entire sample exclusively permits in-plane domains, with their distribution remaining insensitive to temperature changes below the Curie temperature (TC ). The domain wall pinning field monotonically decreases with increasing temperature up to TC , as evidenced by a combination of experimental observations and phase-field simulations. Our work high- lights the promising potential of dislocation engineering in controlling domain wall mobility within bulk ferroelectrics. |
| Zusätzliche Informationen: | Artikel-ID: 112904 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe 07 Fachbereich Chemie 07 Fachbereich Chemie > Eduard Zintl-Institut 07 Fachbereich Chemie > Eduard Zintl-Institut > Fachgebiet Physikalische Chemie |
| Hinterlegungsdatum: | 12 Mär 2024 06:22 |
| Letzte Änderung: | 12 Mär 2024 06:36 |
| PPN: | 516226673 |
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