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Weld-freemounting of lamellae for electrical biasing operando TEM

Recalde-Benitez, Oscar ; Pivak, Yevheniy ; Jiang, Tianshu ; Winkler, Robert ; Zintler, Alexander ; Adabifiroozjaei, Esmaeil ; Komissinskiy, Philipp ; Alff, Lambert ; Hubbard, William A. ; Perez-Garza, H. Hugo ; Molina-Luna, Leopoldo (2024)
Weld-freemounting of lamellae for electrical biasing operando TEM.
In: Ultramicroscopy, 260
doi: 10.1016/j.ultramic.2024.113939
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Recent advances in microelectromechanical systems (MEMS)-based substrates and sample holders for in situ transmission electron microscopy (TEM) are currently enabling exciting new opportunities for the nanoscale investigation of materials and devices. The ability to perform electrical testing while simultaneously capturing the wide spectrum of signals detectable in a TEM, including structural, chemical, and even electronic contrast, represents a significant milestone in the realm of nanoelectronics. In situ studies hold particular promise for the development of Metal-Insulator-Metal (MIM) devices for use in next-generation computing. However, achieving successful device operation in the TEM typically necessitates meticulous sample preparation involving focused ion beam (FIB) systems. Conducting contamination introduced during the FIB thinning process and subsequent attachment of the sample onto a MEMS-based chip remains a formidable challenge. This article delineates an improved FIB-based sample preparation methodology that results in good electrical connectivity and operational functionality across various MIM devices. To exemplify the efficacy of the sample preparation technique, we demonstrate preparation of a clean cross section extracted from a Au/Pt/BaSrTiO3/SrMoO3 tunable capacitor (varactor). The FIB-prepared TEM lamella mounted on a MEMS-based chip showed current levels in the tens of picoamperes range at 0.1 V. Furthermore, the electric response and current density of the TEM lamella device closely align with macro-scale devices. These samples exhibit comparable current densities to their macro-sized counterparts thus validating the sample preparation process and confirming device connectivity. The simultaneous operation and TEM characterization of electronic devices enabled by this process enables direct correlation between device structure and function, which could prove pivotal in the development of new MIM systems.

Typ des Eintrags: Artikel
Erschienen: 2024
Autor(en): Recalde-Benitez, Oscar ; Pivak, Yevheniy ; Jiang, Tianshu ; Winkler, Robert ; Zintler, Alexander ; Adabifiroozjaei, Esmaeil ; Komissinskiy, Philipp ; Alff, Lambert ; Hubbard, William A. ; Perez-Garza, H. Hugo ; Molina-Luna, Leopoldo
Art des Eintrags: Bibliographie
Titel: Weld-freemounting of lamellae for electrical biasing operando TEM
Sprache: Englisch
Publikationsjahr: 2024
Ort: Amsterdam
Verlag: Elsevier
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Ultramicroscopy
Jahrgang/Volume einer Zeitschrift: 260
Kollation: 7 Seiten
DOI: 10.1016/j.ultramic.2024.113939
Kurzbeschreibung (Abstract):

Recent advances in microelectromechanical systems (MEMS)-based substrates and sample holders for in situ transmission electron microscopy (TEM) are currently enabling exciting new opportunities for the nanoscale investigation of materials and devices. The ability to perform electrical testing while simultaneously capturing the wide spectrum of signals detectable in a TEM, including structural, chemical, and even electronic contrast, represents a significant milestone in the realm of nanoelectronics. In situ studies hold particular promise for the development of Metal-Insulator-Metal (MIM) devices for use in next-generation computing. However, achieving successful device operation in the TEM typically necessitates meticulous sample preparation involving focused ion beam (FIB) systems. Conducting contamination introduced during the FIB thinning process and subsequent attachment of the sample onto a MEMS-based chip remains a formidable challenge. This article delineates an improved FIB-based sample preparation methodology that results in good electrical connectivity and operational functionality across various MIM devices. To exemplify the efficacy of the sample preparation technique, we demonstrate preparation of a clean cross section extracted from a Au/Pt/BaSrTiO3/SrMoO3 tunable capacitor (varactor). The FIB-prepared TEM lamella mounted on a MEMS-based chip showed current levels in the tens of picoamperes range at 0.1 V. Furthermore, the electric response and current density of the TEM lamella device closely align with macro-scale devices. These samples exhibit comparable current densities to their macro-sized counterparts thus validating the sample preparation process and confirming device connectivity. The simultaneous operation and TEM characterization of electronic devices enabled by this process enables direct correlation between device structure and function, which could prove pivotal in the development of new MIM systems.

ID-Nummer: Artikel-ID; 113939
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenmikroskopie
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten
Hinterlegungsdatum: 08 Mär 2024 11:35
Letzte Änderung: 08 Mär 2024 11:35
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