Hadley, A. ; Notthoff, C. ; Mota-Santiago, P. ; Hossain, U. H. ; Kirby, N. ; Toimil-Molares, M. E. ; Trautmann, C. ; Kluth, P. (2019)
Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: influence of ion energy and etching conditions.
In: Nanotechnology, 30 (27)
doi: 10.1088/1361-6528/ab10c8
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Small angle x-ray scattering was used to study the morphology of conical structures formed in thin films of amorphous SiO2. Samples were irradiated with 1.1 GeV Au ions at the GSI UNILAC in Darmstadt, Germany, and with 185, 89 and 54 MeV Au ions at the Heavy Ion Accelerator Facility at ANU in Canberra, Australia. The irradiated material was subsequently etched in HF using two different etchant concentrations over a series of etch times to reveal conically shaped etched channels of various sizes. Synchrotron based SAXS measurements were used to characterize both the radial and axial ion track etch rates with unprecedented precision. The results show that the ion energy has a significant effect on the morphology of the etched channels, and that at short etch times resulting in very small cones, the increased etching rate of the damaged region in the radial direction with respect to the ion trajectory is significant.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Hadley, A. ; Notthoff, C. ; Mota-Santiago, P. ; Hossain, U. H. ; Kirby, N. ; Toimil-Molares, M. E. ; Trautmann, C. ; Kluth, P. |
| Art des Eintrags: | Bibliographie |
| Titel: | Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: influence of ion energy and etching conditions |
| Sprache: | Englisch |
| Publikationsjahr: | 5 Juli 2019 |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nanotechnology |
| Jahrgang/Volume einer Zeitschrift: | 30 |
| (Heft-)Nummer: | 27 |
| DOI: | 10.1088/1361-6528/ab10c8 |
| Kurzbeschreibung (Abstract): | Small angle x-ray scattering was used to study the morphology of conical structures formed in thin films of amorphous SiO2. Samples were irradiated with 1.1 GeV Au ions at the GSI UNILAC in Darmstadt, Germany, and with 185, 89 and 54 MeV Au ions at the Heavy Ion Accelerator Facility at ANU in Canberra, Australia. The irradiated material was subsequently etched in HF using two different etchant concentrations over a series of etch times to reveal conically shaped etched channels of various sizes. Synchrotron based SAXS measurements were used to characterize both the radial and axial ion track etch rates with unprecedented precision. The results show that the ion energy has a significant effect on the morphology of the etched channels, and that at short etch times resulting in very small cones, the increased etching rate of the damaged region in the radial direction with respect to the ion trajectory is significant. |
| Freie Schlagworte: | nanocones, etched ion tracks, swift heavy ion irradiation, small angle x-ray scattering (SAXS) |
| Zusätzliche Informationen: | Artikel-ID: 274001 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien |
| Hinterlegungsdatum: | 29 Feb 2024 08:40 |
| Letzte Änderung: | 29 Feb 2024 08:40 |
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