TU Darmstadt / ULB / TUbiblio

Sputtering of LiF and other halide crystals in the electronic energy loss regime

Toulemonde, Marcel ; Assmann, Walter ; Ban-d’Etat, Brigitte ; Bender, Markus ; Bergmaier, Andreas ; Boduch, Philippe ; Della Negra, Serge ; Duan, Jinglai ; El-Said, Aymann S. ; Grüner, Florian ; Liu, Jie ; Lelièvre, Daniel ; Rothard, Hermann ; Seidl, Tim ; Severin, Daniel ; Stoquert, Jean Paul ; Voss, Kay-Obe ; Trautmann, Christina (2020)
Sputtering of LiF and other halide crystals in the electronic energy loss regime.
In: The European Physical Journal D, 74 (7)
doi: 10.1140/epjd/e2020-10040-9
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Sputtering experiments were performed by irradiating LiF, NaCl, and RbCl crystals with various swift heavy ions like S, Ni, I, Au with energies between 60 and 210 MeV, C-60 clusters between 12 and 30 MeV or Pb ions between 730 and 6040 MeV. Sputtered species are collected on arc-shaped catchers and subsequently analyzed by elastic recoil detection analysis or Rutherford backscattering analysis. The study focuses on angular distributions and total yields for LiF and covers a broad range of experimental parameters including cleaved or rough sample surfaces, ion fluence, beam incident angles, and different ion velocities leading to electronic energy loss (S-e) values from 5 to 45 keV/nm. In most cases, the angular distribution has two components, a jet-like peak perpendicular to the surface sample superimposed on a broad isotropic cosine distribution whatever is the beam incident angle. The observation of the jet depends mainly on the surface flatness and angle of ion incidence. However, the jet does not appear clearly when irradiated with C-60 cluster. The sputtering yield is stoichiometric and characterized by huge total yields of up to a few 10(5) atoms per incident ion. The yield follows a power law as function of electronic energy loss, Y follows an exponential law with S-e(n) with n similar to 4. While the azimuthal symmetry for sputtering is observed at low ion velocity (similar to 1 MeV/u), it seems to be lost at high velocity (>4 MeV/u). The data provide a comprehensive overview how the angular distribution and the total sputtering yield scale with the energy loss, beam incidence angle and ion velocity. Complementary experiments have been done with NaCl and RbCl targets confirming the observation made for LiF.

Typ des Eintrags: Artikel
Erschienen: 2020
Autor(en): Toulemonde, Marcel ; Assmann, Walter ; Ban-d’Etat, Brigitte ; Bender, Markus ; Bergmaier, Andreas ; Boduch, Philippe ; Della Negra, Serge ; Duan, Jinglai ; El-Said, Aymann S. ; Grüner, Florian ; Liu, Jie ; Lelièvre, Daniel ; Rothard, Hermann ; Seidl, Tim ; Severin, Daniel ; Stoquert, Jean Paul ; Voss, Kay-Obe ; Trautmann, Christina
Art des Eintrags: Bibliographie
Titel: Sputtering of LiF and other halide crystals in the electronic energy loss regime
Sprache: Englisch
Publikationsjahr: 7 Juli 2020
Verlag: Springer Nature
Titel der Zeitschrift, Zeitung oder Schriftenreihe: The European Physical Journal D
Jahrgang/Volume einer Zeitschrift: 74
(Heft-)Nummer: 7
DOI: 10.1140/epjd/e2020-10040-9
Kurzbeschreibung (Abstract):

Sputtering experiments were performed by irradiating LiF, NaCl, and RbCl crystals with various swift heavy ions like S, Ni, I, Au with energies between 60 and 210 MeV, C-60 clusters between 12 and 30 MeV or Pb ions between 730 and 6040 MeV. Sputtered species are collected on arc-shaped catchers and subsequently analyzed by elastic recoil detection analysis or Rutherford backscattering analysis. The study focuses on angular distributions and total yields for LiF and covers a broad range of experimental parameters including cleaved or rough sample surfaces, ion fluence, beam incident angles, and different ion velocities leading to electronic energy loss (S-e) values from 5 to 45 keV/nm. In most cases, the angular distribution has two components, a jet-like peak perpendicular to the surface sample superimposed on a broad isotropic cosine distribution whatever is the beam incident angle. The observation of the jet depends mainly on the surface flatness and angle of ion incidence. However, the jet does not appear clearly when irradiated with C-60 cluster. The sputtering yield is stoichiometric and characterized by huge total yields of up to a few 10(5) atoms per incident ion. The yield follows a power law as function of electronic energy loss, Y follows an exponential law with S-e(n) with n similar to 4. While the azimuthal symmetry for sputtering is observed at low ion velocity (similar to 1 MeV/u), it seems to be lost at high velocity (>4 MeV/u). The data provide a comprehensive overview how the angular distribution and the total sputtering yield scale with the energy loss, beam incidence angle and ion velocity. Complementary experiments have been done with NaCl and RbCl targets confirming the observation made for LiF.

Freie Schlagworte: atomic and molecular collisions
Zusätzliche Informationen:

Artikel-ID: 144

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien
Hinterlegungsdatum: 29 Feb 2024 08:10
Letzte Änderung: 29 Feb 2024 08:10
PPN:
Export:
Suche nach Titel in: TUfind oder in Google
Frage zum Eintrag Frage zum Eintrag

Optionen (nur für Redakteure)
Redaktionelle Details anzeigen Redaktionelle Details anzeigen