Lake, Russell E. ; Persaud, Arun ; Christian, Casey ; Barnard, Edward S. ; Chan, Emory M. ; Bettiol, Andrew A. ; Tomut, Marilena ; Trautmann, Christina ; Schenkel, Thomas (2021)
Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions.
In: Applied Physics Letters, 118 (8)
doi: 10.1063/5.0036643
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV−) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV− centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to the formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30-μm-long percolation chains.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Lake, Russell E. ; Persaud, Arun ; Christian, Casey ; Barnard, Edward S. ; Chan, Emory M. ; Bettiol, Andrew A. ; Tomut, Marilena ; Trautmann, Christina ; Schenkel, Thomas |
| Art des Eintrags: | Bibliographie |
| Titel: | Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions |
| Sprache: | Englisch |
| Publikationsjahr: | 24 Februar 2021 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 118 |
| (Heft-)Nummer: | 8 |
| DOI: | 10.1063/5.0036643 |
| Kurzbeschreibung (Abstract): | We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV−) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV− centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to the formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30-μm-long percolation chains. |
| Zusätzliche Informationen: | Artikel-ID: 084002 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien |
| Hinterlegungsdatum: | 29 Feb 2024 07:56 |
| Letzte Änderung: | 29 Feb 2024 07:56 |
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