Bagatin, M. ; Gerardin, S. ; Paccagnella, A. ; Santin, G. ; Costantino, A. ; Ferlet-Cavrois, V. ; Muschitiello, M. ; Beltrami, S. ; Voss, K. O. ; Trautmann, C. (2022)
Energy deposition by ultrahigh energy ions in large and small sensitive volumes.
In: IEEE Transactions on nuclear science, 69 (3)
doi: 10.1109/TNS.2022.3143465
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The deposition of energy in large and small sensitive volumes is studied after ultrahigh energy heavy-ion irradiation. We demonstrate that the energy deposition increase effect previously reported in p-i-n diode detectors due to delta electrons occurs only in large sensitive volumes, but not in small ones, typical of advanced microelectronic devices, such as the cells of a 3-D NAND Flash memories. We attribute this effect to the trajectories of the secondary electrons.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Bagatin, M. ; Gerardin, S. ; Paccagnella, A. ; Santin, G. ; Costantino, A. ; Ferlet-Cavrois, V. ; Muschitiello, M. ; Beltrami, S. ; Voss, K. O. ; Trautmann, C. |
| Art des Eintrags: | Bibliographie |
| Titel: | Energy deposition by ultrahigh energy ions in large and small sensitive volumes |
| Sprache: | Englisch |
| Publikationsjahr: | März 2022 |
| Verlag: | Institute of Electrical and Electronics Engineers (IEEE) |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | IEEE Transactions on nuclear science |
| Jahrgang/Volume einer Zeitschrift: | 69 |
| (Heft-)Nummer: | 3 |
| DOI: | 10.1109/TNS.2022.3143465 |
| Kurzbeschreibung (Abstract): | The deposition of energy in large and small sensitive volumes is studied after ultrahigh energy heavy-ion irradiation. We demonstrate that the energy deposition increase effect previously reported in p-i-n diode detectors due to delta electrons occurs only in large sensitive volumes, but not in small ones, typical of advanced microelectronic devices, such as the cells of a 3-D NAND Flash memories. We attribute this effect to the trajectories of the secondary electrons. |
| Freie Schlagworte: | ions, iron, flash memories, three-dimensional displays, ion beams, semiconductor diodes, xenon, high-energy ion beams, passivated implanted planar silicon (PIPS) diodes, single event effects (SEEs) |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien |
| Hinterlegungsdatum: | 27 Feb 2024 06:15 |
| Letzte Änderung: | 27 Feb 2024 08:56 |
| PPN: | 515828653 |
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