Suzuki, Issei ; Lin, Zexin ; Nogami, Taichi ; Kawanishi, Sakiko ; Huang, Binxiang ; Klein, Andreas ; Omata, Takahisa (2024)
High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics.
In: APL Materials, 2023, 11 (3)
doi: 10.26083/tuprints-00026512
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
It has been recently reported that n-type single crystalline SnS exhibits a large band bending (∼1 eV) at the interface with MoO₃, which is a large work function material. In this study, we applied this interface to solar cells for the first time and evaluated its photovoltaic properties. The highest VOC achieved was 437 mV. Although this value is the highest ever recorded for SnS solar cells, it was lower than the expected value of 700–800 mV. The highest power conversion efficiency (PCE) was 4.4%. Based on an analysis of the device parameters, we propose methods for improving the device performance, including VOC, the short-circuit current, and PCE. The carrier-collection length of the n-type SnS single crystals was estimated to be ∼200 nm based on the external quantum efficiency measurements. Therefore, this study demonstrates that the VOC of SnS solar cells can be improved by fabricating a junction with MoO₃ thin films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Suzuki, Issei ; Lin, Zexin ; Nogami, Taichi ; Kawanishi, Sakiko ; Huang, Binxiang ; Klein, Andreas ; Omata, Takahisa |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics |
| Sprache: | Englisch |
| Publikationsjahr: | 20 Februar 2024 |
| Ort: | Darmstadt |
| Publikationsdatum der Erstveröffentlichung: | 2023 |
| Ort der Erstveröffentlichung: | Melville, NY |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | APL Materials |
| Jahrgang/Volume einer Zeitschrift: | 11 |
| (Heft-)Nummer: | 3 |
| Kollation: | 6 Seiten |
| DOI: | 10.26083/tuprints-00026512 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/26512 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | It has been recently reported that n-type single crystalline SnS exhibits a large band bending (∼1 eV) at the interface with MoO₃, which is a large work function material. In this study, we applied this interface to solar cells for the first time and evaluated its photovoltaic properties. The highest VOC achieved was 437 mV. Although this value is the highest ever recorded for SnS solar cells, it was lower than the expected value of 700–800 mV. The highest power conversion efficiency (PCE) was 4.4%. Based on an analysis of the device parameters, we propose methods for improving the device performance, including VOC, the short-circuit current, and PCE. The carrier-collection length of the n-type SnS single crystals was estimated to be ∼200 nm based on the external quantum efficiency measurements. Therefore, this study demonstrates that the VOC of SnS solar cells can be improved by fabricating a junction with MoO₃ thin films. |
| ID-Nummer: | Artikel-ID: 031116 |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-265122 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 600 Technik, Medizin, angewandte Wissenschaften > 600 Technik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenstruktur von Materialien |
| Hinterlegungsdatum: | 20 Feb 2024 08:22 |
| Letzte Änderung: | 21 Feb 2024 06:28 |
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| Suche nach Titel in: | TUfind oder in Google |
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- High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics. (deposited 20 Feb 2024 08:22) [Gegenwärtig angezeigt]
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