Länger, C. ; Ernst, P. ; Bender, M. ; Severin, D. ; Trautmann, C. ; Schleberger, M. ; Dürr, M. (2021)
Single-ion induced surface modifications on hydrogen-covered Si(001) surfaces—significant difference between slow highly charged and swift heavy ions.
In: New Journal of Physics, 23 (9)
doi: 10.1088/1367-2630/ac254d
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Hydrogen-covered Si(001) surfaces were exposed to swift heavy ions (SHI) and slow highly charged ions (HCI). Using scanning tunneling microscopy as analysis tool, the ion-induced modifications on the surface were resolved on the atomic scale. SHI were found occasionally to lead to changes which are restricted to one or two Si surface atoms. In comparison, HCI form pits of several nanometers in diameter, depending on the potential energy of the HCI. These observations are in contrast to many material systems for which similar effects of SHI and HCI have been observed. The results suggest a high stopping power threshold for SHI-induced modifications in crystalline silicon with major implications for the application in silicon-based nanotechnology.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Länger, C. ; Ernst, P. ; Bender, M. ; Severin, D. ; Trautmann, C. ; Schleberger, M. ; Dürr, M. |
| Art des Eintrags: | Bibliographie |
| Titel: | Single-ion induced surface modifications on hydrogen-covered Si(001) surfaces—significant difference between slow highly charged and swift heavy ions |
| Sprache: | Englisch |
| Publikationsjahr: | 27 September 2021 |
| Ort: | London |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | New Journal of Physics |
| Jahrgang/Volume einer Zeitschrift: | 23 |
| (Heft-)Nummer: | 9 |
| Kollation: | 8 Seiten |
| DOI: | 10.1088/1367-2630/ac254d |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Hydrogen-covered Si(001) surfaces were exposed to swift heavy ions (SHI) and slow highly charged ions (HCI). Using scanning tunneling microscopy as analysis tool, the ion-induced modifications on the surface were resolved on the atomic scale. SHI were found occasionally to lead to changes which are restricted to one or two Si surface atoms. In comparison, HCI form pits of several nanometers in diameter, depending on the potential energy of the HCI. These observations are in contrast to many material systems for which similar effects of SHI and HCI have been observed. The results suggest a high stopping power threshold for SHI-induced modifications in crystalline silicon with major implications for the application in silicon-based nanotechnology. |
| Freie Schlagworte: | swift heavy ions, silicon, highly charged ions, scanning tunneling microscopy, STM |
| ID-Nummer: | Artikel-ID: 093037 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 500 Naturwissenschaften und Mathematik > 540 Chemie |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien |
| Hinterlegungsdatum: | 14 Feb 2024 08:58 |
| Letzte Änderung: | 14 Feb 2024 08:58 |
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| Suche nach Titel in: | TUfind oder in Google |
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Single-ion induced surface modifications on hydrogen-covered Si(001) surfaces—significant difference between slow highly charged and swift heavy ions. (deposited 13 Feb 2024 10:16)
- Single-ion induced surface modifications on hydrogen-covered Si(001) surfaces—significant difference between slow highly charged and swift heavy ions. (deposited 14 Feb 2024 08:58) [Gegenwärtig angezeigt]
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