Jeong, Jaehoon ; Singaraju, Surya Abhishek ; Aghassi‐Hagmann, Jasmin ; Hahn, Horst ; Breitung, Ben (2020)
Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors.
In: ChemElectroChem, 7 (13)
doi: 10.1002/celc.202000305
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm⁻¹ at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×10⁴ and a subthreshold swing of 117 mV dec⁻¹ can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Jeong, Jaehoon ; Singaraju, Surya Abhishek ; Aghassi‐Hagmann, Jasmin ; Hahn, Horst ; Breitung, Ben |
| Art des Eintrags: | Bibliographie |
| Titel: | Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors |
| Sprache: | Englisch |
| Publikationsjahr: | 2020 |
| Ort: | Weinheim |
| Verlag: | Wiley-VCH |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ChemElectroChem |
| Jahrgang/Volume einer Zeitschrift: | 7 |
| (Heft-)Nummer: | 13 |
| DOI: | 10.1002/celc.202000305 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm⁻¹ at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×10⁴ and a subthreshold swing of 117 mV dec⁻¹ can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators. |
| Freie Schlagworte: | adhesive ion gels, electrolyte-gated transistors, ionic liquids, ion gels, printed electronics |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 540 Chemie 600 Technik, Medizin, angewandte Wissenschaften > 660 Technische Chemie |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien |
| Hinterlegungsdatum: | 24 Jan 2024 07:19 |
| Letzte Änderung: | 24 Jan 2024 07:19 |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
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Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors. (deposited 23 Jan 2024 13:46)
- Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors. (deposited 24 Jan 2024 07:19) [Gegenwärtig angezeigt]
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