Ghorbani, Elaheh (2024)
On efficiency of earth-abundant chalcogenide photovoltaic materials buffered with CdS: the limiting effect of band alignment.
In: Journal of Physics: Energy, 2020, 2 (2)
doi: 10.26083/tuprints-00020438
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
Earth-abundant and environmentally-friendly Cu₂–II–IV–VI₄ (II = Sr, Ba; IV = Ge, Sn; VI = S,Se) are considered materials for the absorber layers in thin film solar cells. Attempts to understand and improve optoelectronic properties of these newly emerged absorbers resulted in an efficiency of 5.2% in less than two years. However, the energy band alignment at the buffer/absorber interface has not been studied yet; an information which is of crucial importance for designing high performance devices. Therefore, current study focuses on the band offsets between these materials and the CdS buffer. Using first-principles calculations, band discontinuities are calculated at the buffer/absorber interface. The results yield a type-II band alignment between all Cu₂–II–IV–VI₄ absorbers and CdS, hence a negative ΔEc. Adoption of a negative ΔEc (cliff-like conduction band offset) at the buffer/absorber interface, however, gives rise to low open circuit voltage and high interface-related recombinations. Therefore, it is necessary to search for an alternative buffer material that forms a type-I band alignment with these absorbers, where the conduction band minimum and the valence band maximum are both localized on the absorber side.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Ghorbani, Elaheh |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | On efficiency of earth-abundant chalcogenide photovoltaic materials buffered with CdS: the limiting effect of band alignment |
| Sprache: | Englisch |
| Publikationsjahr: | 9 Januar 2024 |
| Ort: | Darmstadt |
| Publikationsdatum der Erstveröffentlichung: | 2020 |
| Ort der Erstveröffentlichung: | Bristol |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics: Energy |
| Jahrgang/Volume einer Zeitschrift: | 2 |
| (Heft-)Nummer: | 2 |
| Kollation: | 9 Seiten |
| DOI: | 10.26083/tuprints-00020438 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/20438 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichung DeepGreen |
| Kurzbeschreibung (Abstract): | Earth-abundant and environmentally-friendly Cu₂–II–IV–VI₄ (II = Sr, Ba; IV = Ge, Sn; VI = S,Se) are considered materials for the absorber layers in thin film solar cells. Attempts to understand and improve optoelectronic properties of these newly emerged absorbers resulted in an efficiency of 5.2% in less than two years. However, the energy band alignment at the buffer/absorber interface has not been studied yet; an information which is of crucial importance for designing high performance devices. Therefore, current study focuses on the band offsets between these materials and the CdS buffer. Using first-principles calculations, band discontinuities are calculated at the buffer/absorber interface. The results yield a type-II band alignment between all Cu₂–II–IV–VI₄ absorbers and CdS, hence a negative ΔEc. Adoption of a negative ΔEc (cliff-like conduction band offset) at the buffer/absorber interface, however, gives rise to low open circuit voltage and high interface-related recombinations. Therefore, it is necessary to search for an alternative buffer material that forms a type-I band alignment with these absorbers, where the conduction band minimum and the valence band maximum are both localized on the absorber side. |
| Freie Schlagworte: | earth-abundant chalcogenides, band alignment, buffer/absorber interface, first-principles calculations |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-204382 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 500 Naturwissenschaften und Mathematik > 540 Chemie |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung |
| Hinterlegungsdatum: | 09 Jan 2024 10:38 |
| Letzte Änderung: | 10 Jan 2024 09:01 |
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- On efficiency of earth-abundant chalcogenide photovoltaic materials buffered with CdS: the limiting effect of band alignment. (deposited 09 Jan 2024 10:38) [Gegenwärtig angezeigt]
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