Yan, Ruijuan ; Xie, Wenjie ; Weidenkaff, Anke (2023)
Improving thermoelectric performance of half-Heusler Ti0.2Hf0.8CoSb0.8Sn0.2 compounds via the introduction of excessive Ga and Co-deficiencies.
In: Ceramics International, 49 (14)
doi: 10.1016/j.ceramint.2022.11.353
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
(Ti/Zr/Hf)CoSb0.8Sn0.2 compounds are promising p-type thermoelectric materials. In this work, excessive Ga and Co deficiencies were introduced into Ti0.2Hf0.8CoSb0.8Sn0.2 compounds. The microstructure, electrical, and thermal transport properties were investigated in the temperature range of 300 K < T < 1000 K. The excessive Ga formed nanoinclusions with Ti and Sn at the grain boundaries. The Co deficiencies lowered the thermal conductivity and simultaneously improved the electrical conductivity. As a result, the power factor was enhanced to 3.2 mW/m K2, and the maximum Z.T. of ∼0.93 at 988 K was obtained in the Ti0.2Hf0.8Co0.99Sb0.8Sn0.2–0.01Ga sample, which is an increase of ∼48% compared to that of the pristine Ti0.2Hf0.8CoSb0.8Sn0.2 sample.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2023 |
| Autor(en): | Yan, Ruijuan ; Xie, Wenjie ; Weidenkaff, Anke |
| Art des Eintrags: | Bibliographie |
| Titel: | Improving thermoelectric performance of half-Heusler Ti0.2Hf0.8CoSb0.8Sn0.2 compounds via the introduction of excessive Ga and Co-deficiencies |
| Sprache: | Englisch |
| Publikationsjahr: | 15 Juli 2023 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Ceramics International |
| Jahrgang/Volume einer Zeitschrift: | 49 |
| (Heft-)Nummer: | 14 |
| DOI: | 10.1016/j.ceramint.2022.11.353 |
| Kurzbeschreibung (Abstract): | (Ti/Zr/Hf)CoSb0.8Sn0.2 compounds are promising p-type thermoelectric materials. In this work, excessive Ga and Co deficiencies were introduced into Ti0.2Hf0.8CoSb0.8Sn0.2 compounds. The microstructure, electrical, and thermal transport properties were investigated in the temperature range of 300 K < T < 1000 K. The excessive Ga formed nanoinclusions with Ti and Sn at the grain boundaries. The Co deficiencies lowered the thermal conductivity and simultaneously improved the electrical conductivity. As a result, the power factor was enhanced to 3.2 mW/m K2, and the maximum Z.T. of ∼0.93 at 988 K was obtained in the Ti0.2Hf0.8Co0.99Sb0.8Sn0.2–0.01Ga sample, which is an increase of ∼48% compared to that of the pristine Ti0.2Hf0.8CoSb0.8Sn0.2 sample. |
| Freie Schlagworte: | Half-Heusler compounds, nanoinclusions, electrical conductivity, thermal conductivity |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Werkstofftechnik und Ressourcenmanagement |
| Hinterlegungsdatum: | 09 Jan 2024 07:45 |
| Letzte Änderung: | 09 Jan 2024 07:49 |
| PPN: | 51452796X |
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