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High-Temperature Raman Spectroscopy of Nano-Crystalline Carbon in Silicon Oxycarbide

Rosenburg, Felix ; Ionescu, Emanuel ; Nicoloso, Norbert ; Riedel, Ralf (2023)
High-Temperature Raman Spectroscopy of Nano-Crystalline Carbon in Silicon Oxycarbide.
In: Materials, 2018, 11 (1)
doi: 10.26083/tuprints-00016368
Artikel, Zweitveröffentlichung, Verlagsversion

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Kurzbeschreibung (Abstract)

The microstructure of segregated carbon in silicon oxycarbide (SiOC), hot-pressed at T = 1600 °C and p = 50 MPa, has been investigated by VIS Raman spectroscopy (λ = 514 nm) within the temperature range 25–1000 °C in air. The occurrence of the G, D’ and D bands at 1590, 1620 and 1350 cm⁻¹, together with a lateral crystal size La < 10 nm and an average distance between lattice defects LD ≈ 8 nm, provides evidence that carbon exists as nano-crystalline phase in SiOC containing 11 and 17 vol % carbon. Both samples show a linear red shift of the G band up to the highest temperature applied, which is in agreement with the description of the anharmonic contribution to the lattice potential by the modified Tersoff potential. The temperature coefficient χG = −0.024 ± 0.001 cm⁻¹/°C is close to that of disordered carbon, e.g., carbon nanowalls or commercial activated graphite. The line width of the G band is independent of temperature with FWHM-values of 35 cm⁻¹ (C-11) and 45 cm⁻¹ (C-17), suggesting that scattering with defects and impurities outweighs the phonon-phonon and phonon-electron interactions. Analysis of the Raman line intensities indicates vacancies as dominating defects.

Typ des Eintrags: Artikel
Erschienen: 2023
Autor(en): Rosenburg, Felix ; Ionescu, Emanuel ; Nicoloso, Norbert ; Riedel, Ralf
Art des Eintrags: Zweitveröffentlichung
Titel: High-Temperature Raman Spectroscopy of Nano-Crystalline Carbon in Silicon Oxycarbide
Sprache: Englisch
Publikationsjahr: 21 November 2023
Ort: Darmstadt
Publikationsdatum der Erstveröffentlichung: 2018
Ort der Erstveröffentlichung: Basel
Verlag: MDPI
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Materials
Jahrgang/Volume einer Zeitschrift: 11
(Heft-)Nummer: 1
Kollation: 9 Seiten
DOI: 10.26083/tuprints-00016368
URL / URN: https://tuprints.ulb.tu-darmstadt.de/16368
Zugehörige Links:
Herkunft: Zweitveröffentlichung DeepGreen
Kurzbeschreibung (Abstract):

The microstructure of segregated carbon in silicon oxycarbide (SiOC), hot-pressed at T = 1600 °C and p = 50 MPa, has been investigated by VIS Raman spectroscopy (λ = 514 nm) within the temperature range 25–1000 °C in air. The occurrence of the G, D’ and D bands at 1590, 1620 and 1350 cm⁻¹, together with a lateral crystal size La < 10 nm and an average distance between lattice defects LD ≈ 8 nm, provides evidence that carbon exists as nano-crystalline phase in SiOC containing 11 and 17 vol % carbon. Both samples show a linear red shift of the G band up to the highest temperature applied, which is in agreement with the description of the anharmonic contribution to the lattice potential by the modified Tersoff potential. The temperature coefficient χG = −0.024 ± 0.001 cm⁻¹/°C is close to that of disordered carbon, e.g., carbon nanowalls or commercial activated graphite. The line width of the G band is independent of temperature with FWHM-values of 35 cm⁻¹ (C-11) and 45 cm⁻¹ (C-17), suggesting that scattering with defects and impurities outweighs the phonon-phonon and phonon-electron interactions. Analysis of the Raman line intensities indicates vacancies as dominating defects.

Freie Schlagworte: polymer-derived ceramics, Raman spectroscopy, anharmonicity, carbon, defects
Status: Verlagsversion
URN: urn:nbn:de:tuda-tuprints-163683
Zusätzliche Informationen:

This article belongs to the Special Issue Polymer Derived Ceramics and Applications

Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 540 Chemie
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe
Hinterlegungsdatum: 21 Nov 2023 13:45
Letzte Änderung: 22 Nov 2023 10:03
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