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Bringing the photoplastic effect in ZnO to light: a photoindentation study on pyramidal slip

Oguri, Hiroto ; Li, Yan ; Tochigi, Eita ; Fang, Xufei ; Tanigaki, Kenichi ; Ogura, Yu ; Matsunaga, Katsuyuki ; Nakamura, Atsutomo (2024)
Bringing the photoplastic effect in ZnO to light: a photoindentation study on pyramidal slip.
In: Journal of the European Ceramic Society, 44 (2)
doi: 10.1016/j.jeurceramsoc.2023.09.060
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The external light environment has been reported to have a pronounced influence on the dislocation-based plasticity in various inorganic semiconductors. Herein, with a specific focus on the pyramidal slip in wurtzite structures, photoindentation tests were performed on the (0001) plane of ZnO crystal to activate the pyramidal slip and evaluate the effects of light on dislocation behaviors. Statistical analyses of the first pop-in events suggested that the corresponding maximum shear stresses in darkness were slightly smaller than those in 405 nm light, indicating a minor effect of light on dislocation nucleation event. Regarding nanoindentation creep tests, light illumination was found to suppress the indentation depth. Further transmission electron microscopy observations demonstrated that indentation-induced pyramidal dislocations were present deeper in darkness than in 405 nm light, revealing a suppressive effect of light illumination on the pyramidal slip in ZnO for the first time.

Typ des Eintrags: Artikel
Erschienen: 2024
Autor(en): Oguri, Hiroto ; Li, Yan ; Tochigi, Eita ; Fang, Xufei ; Tanigaki, Kenichi ; Ogura, Yu ; Matsunaga, Katsuyuki ; Nakamura, Atsutomo
Art des Eintrags: Bibliographie
Titel: Bringing the photoplastic effect in ZnO to light: a photoindentation study on pyramidal slip
Sprache: Englisch
Publikationsjahr: Februar 2024
Verlag: Elsevier
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of the European Ceramic Society
Jahrgang/Volume einer Zeitschrift: 44
(Heft-)Nummer: 2
DOI: 10.1016/j.jeurceramsoc.2023.09.060
Kurzbeschreibung (Abstract):

The external light environment has been reported to have a pronounced influence on the dislocation-based plasticity in various inorganic semiconductors. Herein, with a specific focus on the pyramidal slip in wurtzite structures, photoindentation tests were performed on the (0001) plane of ZnO crystal to activate the pyramidal slip and evaluate the effects of light on dislocation behaviors. Statistical analyses of the first pop-in events suggested that the corresponding maximum shear stresses in darkness were slightly smaller than those in 405 nm light, indicating a minor effect of light on dislocation nucleation event. Regarding nanoindentation creep tests, light illumination was found to suppress the indentation depth. Further transmission electron microscopy observations demonstrated that indentation-induced pyramidal dislocations were present deeper in darkness than in 405 nm light, revealing a suppressive effect of light illumination on the pyramidal slip in ZnO for the first time.

Freie Schlagworte: plasticity, oxides, compound semiconductors, Wurtzite, dislocations
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe
Hinterlegungsdatum: 16 Nov 2023 06:45
Letzte Änderung: 16 Nov 2023 06:45
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