Jiang, Tianshu ; Ni, Fan ; Recalde-Benitez, Oscar ; Breckner, Patrick ; Molina-Luna, Leopoldo ; Zhuo, Fangping ; Rödel, Jürgen (2023)
Observation of dislocation-controlled domain nucleation and domain-wall pinning in single-crystal BaTiO3.
In: Applied Physics Letters, 123
doi: 10.1063/5.0173819
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Electro-mechanical interactions between topological defects and domain walls play a key role in the macroscopic response of bulk and thin- film ferroelectrics. The applications of ferroelectrics are derived from their inherent ability to nucleate new domains and to move the domain walls that separate adjacent domains. Here, we report dislocation-mediated domain nucleation in single-crystal BaTiO 3 , achieved by dislocations generated via high-temperature uniaxial compression on a notched sample. We also present a direct observation of domain-wall pin- ning of 90° ferroelastic domain walls by dislocations using in situ transmission electron microscopy. Dense and well-aligned “forest” dislocations, featuring {100}h100i slip systems oriented in the out-of-plane [001] direction, exclusively nucleate in-plane domain variants. We reveal that the 90° domain walls are strongly pinned by imprinted dislocations due to the presence of their associated stress fields. Our find- ings may advance our understanding of the control of defects in ferroelectrics and propose a strategy applicable to both emerging nanoelectronic and bulk applications.

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