Sanjari, Mohammad Shahab (2023)
Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors.
Technische Universität Darmstadt
doi: 10.26083/tuprints-00023080
Masterarbeit, Erstveröffentlichung, Verlagsversion
Kurzbeschreibung (Abstract)
This work deals with the realization of resonant tunneling diodes based on polar and non-polar gallium nitride for use in very high frequency applications. First, the material properties of gallium nitride and aluminium nitride are discussed. After a brief review of existing theories for the calculation of heterostructures, results of simulations on some proposed structures are presented. The growth and fabrication of several single and dual quantum barrier diode structures using MOCVD and clean room contact lithography are then described. The fabricated diodes were electrically measured and characterised. The results obtained are finally compared with the literature.
| Typ des Eintrags: | Masterarbeit |
|---|---|
| Erschienen: | 2023 |
| Autor(en): | Sanjari, Mohammad Shahab |
| Art des Eintrags: | Erstveröffentlichung |
| Titel: | Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors |
| Sprache: | Englisch |
| Publikationsjahr: | 2023 |
| Ort: | Darmstadt |
| Kollation: | 87 Seiten |
| Datum der mündlichen Prüfung: | 2 Februar 2009 |
| DOI: | 10.26083/tuprints-00023080 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/23080 |
| Kurzbeschreibung (Abstract): | This work deals with the realization of resonant tunneling diodes based on polar and non-polar gallium nitride for use in very high frequency applications. First, the material properties of gallium nitride and aluminium nitride are discussed. After a brief review of existing theories for the calculation of heterostructures, results of simulations on some proposed structures are presented. The growth and fabrication of several single and dual quantum barrier diode structures using MOCVD and clean room contact lithography are then described. The fabricated diodes were electrically measured and characterised. The results obtained are finally compared with the literature. |
| Freie Schlagworte: | diode, high frequency, tunneling, electronics, heterostructures, GaN, AlN, AlGaN, MOCVD, microwave, terahertz, semiconductor, quantum |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-230804 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 600 Technik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Höchstfrequenzelektronik |
| Hinterlegungsdatum: | 23 Mär 2023 10:35 |
| Letzte Änderung: | 28 Mär 2023 12:41 |
| PPN: | |
| Datum der mündlichen Prüfung / Verteidigung / mdl. Prüfung: | 2 Februar 2009 |
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