TU Darmstadt / ULB / TUbiblio

Enhanced Photoconductivity at Dislocations in SrTiO3

Kissel, Maximilian ; Porz, Lukas ; Frömling, Till ; Nakamura, Atsutomo ; Rödel, Jürgen ; Alexe, Marin (2022)
Enhanced Photoconductivity at Dislocations in SrTiO3.
In: Advanced Materials
doi: 10.1002/adma.202203032
Artikel, Bibliographie

Dies ist die neueste Version dieses Eintrags.

Kurzbeschreibung (Abstract)

Dislocations are 1D crystallographic line defects and are usually seen as detrimental to the functional properties of classic semiconductors. It is shown here that this not necessarily accounts for oxide semiconductors in which dislocations are capable of boosting the photoconductivity. Strontium titanate single crystals are controllably deformed to generate a high density of ordered dislocations of two slip systems possessing different mesoscopic arrangements. For both slip systems, nanoscale conductive atomic force microscope investigations reveal a strong enhancement of the photoconductivity around the dislocation cores. Macroscopic in-plane measurements indicate that the two dislocation systems result in different global photoconductivity behavior despite the similar local enhancement. Depending on the arrangement, the global photoresponse can be increased by orders of magnitude. Additionally, indications for a bulk photovoltaic effect enabled by dislocation-surrounding strain fields are observed for the first time. This proves that dislocations in oxide semiconductors can be of large interest for tailoring photoelectric functionalities. Direct evidence that electronic transport is confined to the dislocation core points to a new emerging research field.

Typ des Eintrags: Artikel
Erschienen: 2022
Autor(en): Kissel, Maximilian ; Porz, Lukas ; Frömling, Till ; Nakamura, Atsutomo ; Rödel, Jürgen ; Alexe, Marin
Art des Eintrags: Bibliographie
Titel: Enhanced Photoconductivity at Dislocations in SrTiO3
Sprache: Englisch
Publikationsjahr: 26 Juli 2022
Verlag: Wiley
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Advanced Materials
DOI: 10.1002/adma.202203032
Zugehörige Links:
Kurzbeschreibung (Abstract):

Dislocations are 1D crystallographic line defects and are usually seen as detrimental to the functional properties of classic semiconductors. It is shown here that this not necessarily accounts for oxide semiconductors in which dislocations are capable of boosting the photoconductivity. Strontium titanate single crystals are controllably deformed to generate a high density of ordered dislocations of two slip systems possessing different mesoscopic arrangements. For both slip systems, nanoscale conductive atomic force microscope investigations reveal a strong enhancement of the photoconductivity around the dislocation cores. Macroscopic in-plane measurements indicate that the two dislocation systems result in different global photoconductivity behavior despite the similar local enhancement. Depending on the arrangement, the global photoresponse can be increased by orders of magnitude. Additionally, indications for a bulk photovoltaic effect enabled by dislocation-surrounding strain fields are observed for the first time. This proves that dislocations in oxide semiconductors can be of large interest for tailoring photoelectric functionalities. Direct evidence that electronic transport is confined to the dislocation core points to a new emerging research field.

Zusätzliche Informationen:

Artikel-ID: 2203032

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe
Hinterlegungsdatum: 27 Jul 2022 05:09
Letzte Änderung: 03 Jul 2024 02:57
PPN: 497542099
Export:
Suche nach Titel in: TUfind oder in Google

Verfügbare Versionen dieses Eintrags

Frage zum Eintrag Frage zum Eintrag

Optionen (nur für Redakteure)
Redaktionelle Details anzeigen Redaktionelle Details anzeigen