Kurdi, Samer ; Sakuraba, Yuya ; Masuda, Keisuke ; Tajiri, Hiroo ; Nair, Bhaskaran ; Nataf, Guillaume F. ; Vickers, Mary E. ; Reiss, Günter ; Meinert, Markus ; Dhesi, Sarnjeet S. ; Ghidini, Massimo ; Barber, Zoe H. (2022)
Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film.
In: Journal of Physics D: Applied Physics, 2022, 55 (18)
doi: 10.26083/tuprints-00020639
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn₂FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using x-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L2₁ B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our x-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated for the L2₁ B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L2₁ B structure. To realize a half-metallic Mn₂FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2022 |
Autor(en): | Kurdi, Samer ; Sakuraba, Yuya ; Masuda, Keisuke ; Tajiri, Hiroo ; Nair, Bhaskaran ; Nataf, Guillaume F. ; Vickers, Mary E. ; Reiss, Günter ; Meinert, Markus ; Dhesi, Sarnjeet S. ; Ghidini, Massimo ; Barber, Zoe H. |
Art des Eintrags: | Zweitveröffentlichung |
Titel: | Quantitative atomic order characterization of a Mn₂FeAl Heusler epitaxial thin film |
Sprache: | Englisch |
Publikationsjahr: | 2022 |
Ort: | Darmstadt |
Publikationsdatum der Erstveröffentlichung: | 2022 |
Verlag: | IOP Publishing |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics D: Applied Physics |
Jahrgang/Volume einer Zeitschrift: | 55 |
(Heft-)Nummer: | 18 |
Kollation: | 10 Seiten |
DOI: | 10.26083/tuprints-00020639 |
URL / URN: | https://tuprints.ulb.tu-darmstadt.de/20639 |
Zugehörige Links: | |
Herkunft: | Zweitveröffentlichung DeepGreen |
Kurzbeschreibung (Abstract): | In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn₂FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using x-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L2₁ B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our x-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated for the L2₁ B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L2₁ B structure. To realize a half-metallic Mn₂FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder. |
Freie Schlagworte: | Heusler alloy, spintronics, x-ray absorption spectroscopy, x-ray diffraction, x-ray magnetic circular dichroism, spin polarization, thin films |
Status: | Verlagsversion |
URN: | urn:nbn:de:tuda-tuprints-206397 |
Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 500 Naturwissenschaften und Mathematik > 540 Chemie 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik |
Hinterlegungsdatum: | 11 Jul 2022 13:46 |
Letzte Änderung: | 18 Jul 2022 09:10 |
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