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Study and realization of InGaP-GaAs 'Collector up' double heterojunction bipolar transistors for high performance RF applications

Henkel, Achim (1998):
Study and realization of InGaP-GaAs 'Collector up' double heterojunction bipolar transistors for high performance RF applications.
275Düsseldorf: VDI-Verl., 1998. XI,137 S,
Düsseldorf, VDI-Verl, TU Darmstadt, [Ph.D. Thesis]

Item Type: Ph.D. Thesis
Erschienen: 1998
Creators: Henkel, Achim
Title: Study and realization of InGaP-GaAs 'Collector up' double heterojunction bipolar transistors for high performance RF applications
Language: English
Volume: 275
Place of Publication: Düsseldorf
Publisher: VDI-Verl
Edition: Düsseldorf: VDI-Verl., 1998. XI,137 S
Collation: XI,137 S
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 15:55
License: [undefiniert]
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