Wendel, Philipp ; Periyannan, Shanmugapriya ; Jaegermann, Wolfram ; Klein, Andreas (2022)
Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy.
In: Physical Review Materials, 2020, 4 (8)
doi: 10.26083/tuprints-00021184
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
In order to answer the question of whether Schottky barriers on polar ZnO surfaces are different at Zn- and O-terminated surfaces, the interface formation of n-type ZnO and different high work function metals and metal oxides (Pt, PtOₓ, and RuO₂) with Schottky barrier heights of up to 1.5 eV has been studied using photoelectron spectroscopy with in situ sample preparation. The experiments are designed to exclude the effects of substrate reduction and consequent Fermi level pinning by high concentrations of oxygen vacancies. Moreover, by including the Zn LMM Auger emission in the analysis, it is demonstrated that an accurate extraction of barrier heights needs to take into account that the screening of the photoelectron core hole can change in the course of contact formation. The polarization dependence of Schottky barriers, which is important for piezotronic applications, is in most cases dominated by the influence of defects. Reducing the influence of defects, up to ∼240 meV higher Schottky barriers are revealed on oxygen-terminated surfaces. This is opposite to what has been reported in the literature but agrees with the dependence of barrier heights expected for an incomplete screening of the polarization of ZnO by the electrode as for ferroelectric materials.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Wendel, Philipp ; Periyannan, Shanmugapriya ; Jaegermann, Wolfram ; Klein, Andreas |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Publikationsdatum der Erstveröffentlichung: | 2020 |
| Verlag: | American Physical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review Materials |
| Jahrgang/Volume einer Zeitschrift: | 4 |
| (Heft-)Nummer: | 8 |
| Kollation: | 8 Seiten |
| DOI: | 10.26083/tuprints-00021184 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/21184 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | In order to answer the question of whether Schottky barriers on polar ZnO surfaces are different at Zn- and O-terminated surfaces, the interface formation of n-type ZnO and different high work function metals and metal oxides (Pt, PtOₓ, and RuO₂) with Schottky barrier heights of up to 1.5 eV has been studied using photoelectron spectroscopy with in situ sample preparation. The experiments are designed to exclude the effects of substrate reduction and consequent Fermi level pinning by high concentrations of oxygen vacancies. Moreover, by including the Zn LMM Auger emission in the analysis, it is demonstrated that an accurate extraction of barrier heights needs to take into account that the screening of the photoelectron core hole can change in the course of contact formation. The polarization dependence of Schottky barriers, which is important for piezotronic applications, is in most cases dominated by the influence of defects. Reducing the influence of defects, up to ∼240 meV higher Schottky barriers are revealed on oxygen-terminated surfaces. This is opposite to what has been reported in the literature but agrees with the dependence of barrier heights expected for an incomplete screening of the polarization of ZnO by the electrode as for ferroelectric materials. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-211844 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenstruktur von Materialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 22 Apr 2022 11:13 |
| Letzte Änderung: | 25 Apr 2022 06:18 |
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- Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy. (deposited 22 Apr 2022 11:13) [Gegenwärtig angezeigt]
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