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Barrier height at (Ba,Sr)TiO₃/Pt interfaces studied by photoemission

Schafranek, R. ; Payan, S. ; Maglione, M. ; Klein, Andreas (2022)
Barrier height at (Ba,Sr)TiO₃/Pt interfaces studied by photoemission.
In: Physical Review B, 77 (19)
doi: 10.26083/tuprints-00021101
Artikel, Zweitveröffentlichung, Verlagsversion

Kurzbeschreibung (Abstract)

The interface formation of Nb-doped SrTiO₃ single crystals and (Ba,Sr)TiO₃ thin films with Pt has been studied by using photoelectron spectroscopy with in situ sample preparation. For the single crystal sample, a Schottky barrier height for electrons of 0.5–0.6 eV is determined after deposition of Pt in vacuum environment. After annealing in 0.05 Pa oxygen pressure, a strong increase in the barrier height to ≥1.2 eV is observed. X-ray induced photovoltages of up to 0.7 eV are observed in this case and have to be taken into account for a proper determination of the barrier height. A subsequent annealing in vacuum reduces the barrier again. Hence, the barrier height can be reversibly switched between an oxidized state with a large barrier height and a reduced state with a low barrier height. Quantitative analysis of the barrier heights indicates that the changes are related to the changes of interfacial defect concentration. Due to the occurrence of a Ti³⁺ related signal, the defects are identified as oxygen vacancies. The same effects are observed at interfaces between Pt and (Ba,Sr)TiO₃ thin films with a smaller absolute value of the barrier height in the oxidized state of ∼1 eV. Deposition of (Ba,Sr)TiO₃ onto a metallic Pt substrate also results in a barrier height of 1.0 eV.

Typ des Eintrags: Artikel
Erschienen: 2022
Autor(en): Schafranek, R. ; Payan, S. ; Maglione, M. ; Klein, Andreas
Art des Eintrags: Zweitveröffentlichung
Titel: Barrier height at (Ba,Sr)TiO₃/Pt interfaces studied by photoemission
Sprache: Englisch
Publikationsjahr: 2022
Verlag: American Physical Society
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical Review B
Jahrgang/Volume einer Zeitschrift: 77
(Heft-)Nummer: 19
Kollation: 13 Seiten
DOI: 10.26083/tuprints-00021101
URL / URN: https://tuprints.ulb.tu-darmstadt.de/21101
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Herkunft: Zweitveröffentlichungsservice
Kurzbeschreibung (Abstract):

The interface formation of Nb-doped SrTiO₃ single crystals and (Ba,Sr)TiO₃ thin films with Pt has been studied by using photoelectron spectroscopy with in situ sample preparation. For the single crystal sample, a Schottky barrier height for electrons of 0.5–0.6 eV is determined after deposition of Pt in vacuum environment. After annealing in 0.05 Pa oxygen pressure, a strong increase in the barrier height to ≥1.2 eV is observed. X-ray induced photovoltages of up to 0.7 eV are observed in this case and have to be taken into account for a proper determination of the barrier height. A subsequent annealing in vacuum reduces the barrier again. Hence, the barrier height can be reversibly switched between an oxidized state with a large barrier height and a reduced state with a low barrier height. Quantitative analysis of the barrier heights indicates that the changes are related to the changes of interfacial defect concentration. Due to the occurrence of a Ti³⁺ related signal, the defects are identified as oxygen vacancies. The same effects are observed at interfaces between Pt and (Ba,Sr)TiO₃ thin films with a smaller absolute value of the barrier height in the oxidized state of ∼1 eV. Deposition of (Ba,Sr)TiO₃ onto a metallic Pt substrate also results in a barrier height of 1.0 eV.

Status: Verlagsversion
URN: urn:nbn:de:tuda-tuprints-211018
Sachgruppe der Dewey Dezimalklassifikatin (DDC): 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Hinterlegungsdatum: 19 Apr 2022 13:35
Letzte Änderung: 20 Apr 2022 05:24
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