Schafranek, R. ; Payan, S. ; Maglione, M. ; Klein, Andreas (2022)
Barrier height at (Ba,Sr)TiO₃/Pt interfaces studied by photoemission.
In: Physical Review B, 2008, 77 (19)
doi: 10.26083/tuprints-00021101
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
The interface formation of Nb-doped SrTiO₃ single crystals and (Ba,Sr)TiO₃ thin films with Pt has been studied by using photoelectron spectroscopy with in situ sample preparation. For the single crystal sample, a Schottky barrier height for electrons of 0.5–0.6 eV is determined after deposition of Pt in vacuum environment. After annealing in 0.05 Pa oxygen pressure, a strong increase in the barrier height to ≥1.2 eV is observed. X-ray induced photovoltages of up to 0.7 eV are observed in this case and have to be taken into account for a proper determination of the barrier height. A subsequent annealing in vacuum reduces the barrier again. Hence, the barrier height can be reversibly switched between an oxidized state with a large barrier height and a reduced state with a low barrier height. Quantitative analysis of the barrier heights indicates that the changes are related to the changes of interfacial defect concentration. Due to the occurrence of a Ti³⁺ related signal, the defects are identified as oxygen vacancies. The same effects are observed at interfaces between Pt and (Ba,Sr)TiO₃ thin films with a smaller absolute value of the barrier height in the oxidized state of ∼1 eV. Deposition of (Ba,Sr)TiO₃ onto a metallic Pt substrate also results in a barrier height of 1.0 eV.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2022 |
Autor(en): | Schafranek, R. ; Payan, S. ; Maglione, M. ; Klein, Andreas |
Art des Eintrags: | Zweitveröffentlichung |
Titel: | Barrier height at (Ba,Sr)TiO₃/Pt interfaces studied by photoemission |
Sprache: | Englisch |
Publikationsjahr: | 2022 |
Publikationsdatum der Erstveröffentlichung: | 2008 |
Verlag: | American Physical Society |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review B |
Jahrgang/Volume einer Zeitschrift: | 77 |
(Heft-)Nummer: | 19 |
Kollation: | 13 Seiten |
DOI: | 10.26083/tuprints-00021101 |
URL / URN: | https://tuprints.ulb.tu-darmstadt.de/21101 |
Zugehörige Links: | |
Herkunft: | Zweitveröffentlichungsservice |
Kurzbeschreibung (Abstract): | The interface formation of Nb-doped SrTiO₃ single crystals and (Ba,Sr)TiO₃ thin films with Pt has been studied by using photoelectron spectroscopy with in situ sample preparation. For the single crystal sample, a Schottky barrier height for electrons of 0.5–0.6 eV is determined after deposition of Pt in vacuum environment. After annealing in 0.05 Pa oxygen pressure, a strong increase in the barrier height to ≥1.2 eV is observed. X-ray induced photovoltages of up to 0.7 eV are observed in this case and have to be taken into account for a proper determination of the barrier height. A subsequent annealing in vacuum reduces the barrier again. Hence, the barrier height can be reversibly switched between an oxidized state with a large barrier height and a reduced state with a low barrier height. Quantitative analysis of the barrier heights indicates that the changes are related to the changes of interfacial defect concentration. Due to the occurrence of a Ti³⁺ related signal, the defects are identified as oxygen vacancies. The same effects are observed at interfaces between Pt and (Ba,Sr)TiO₃ thin films with a smaller absolute value of the barrier height in the oxidized state of ∼1 eV. Deposition of (Ba,Sr)TiO₃ onto a metallic Pt substrate also results in a barrier height of 1.0 eV. |
Status: | Verlagsversion |
URN: | urn:nbn:de:tuda-tuprints-211018 |
Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
Hinterlegungsdatum: | 19 Apr 2022 13:35 |
Letzte Änderung: | 20 Apr 2022 05:24 |
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