Poulain, Raphaël ; Proost, Joris ; Klein, Andreas (2022)
Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning.
In: Physica status solidi (a), 2019, 216 (23)
doi: 10.26083/tuprints-00016726
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
Different magnetron sputtering‐based deposition methods of nickel oxide SiO₂‐passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO₂ interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO₂ surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state is associated with oxygen interstitial in the SiO₂ implanted during reactive sputtering.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Poulain, Raphaël ; Proost, Joris ; Klein, Andreas |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Publikationsdatum der Erstveröffentlichung: | 2019 |
| Verlag: | Wiley-VCH GmbH |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physica status solidi (a) |
| Jahrgang/Volume einer Zeitschrift: | 216 |
| (Heft-)Nummer: | 23 |
| Kollation: | 7 Seiten |
| DOI: | 10.26083/tuprints-00016726 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/16726 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichung DeepGreen |
| Kurzbeschreibung (Abstract): | Different magnetron sputtering‐based deposition methods of nickel oxide SiO₂‐passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO₂ interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO₂ surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state is associated with oxygen interstitial in the SiO₂ implanted during reactive sputtering. |
| Freie Schlagworte: | Fermi-level pinning, interface passivation, NiO, photoemission, Si |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-167268 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenstruktur von Materialien |
| Hinterlegungsdatum: | 07 Apr 2022 12:16 |
| Letzte Änderung: | 06 Dez 2023 08:16 |
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- Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning. (deposited 07 Apr 2022 12:16) [Gegenwärtig angezeigt]
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