Utt, Daniel Thomas (2022)
Defects in high-entropy alloys studied by atomic scale computer simulations.
Technische Universität Darmstadt
doi: 10.26083/tuprints-00020929
Dissertation, Erstveröffentlichung, Verlagsversion
Kurzbeschreibung (Abstract)
High-entropy alloys (HEAs) are a new class of metal alloys containing multiple principal elements in concentrations between 5-35 at%. Due to their inherent chemical complexity, they possess a wide range of interesting properties, which we explore in greater detail throughout this thesis.
Reduced or sluggish diffusion has been discussed for HEAs since their inception. We perform time-scale bridging simulations on the pseudo-binary (CoCrFeMn)_(1-x)Ni_x HEA, combining atomistic simulations of the vacancy migration energies and equilibrium vacancy concentrations with kinetic Monte Carlo simulations of tracer diffusion trajectories. Here, we extend the established random alloy model to account for the local chemical fluctuations within the complex alloy matrix. The results compare favorably to experimental tracer diffusion measurements.
Dislocations in HEAs also interact with chemical fluctuations in the random matrix. This leads to a meandering dislocation line shape and localized pinning during dislocation glide. We find a physically motivated descriptor for these pinning sites in the form of a per-atom Peierls force. This descriptor shows good spatial correlation with observed dislocation pinning sites during glide. Furthermore, we show that the density of strong pinning sites in an alloy correlates not only with the critical shear required to initiate dislocation glide but also the dislocation mobility.
We report on the grain growth properties of a CoCuFeNi model HEA. Atomistic simulations give unique insights into the effects of random chemical fluctuations by comparison of the HEA to its average-atom counterpart. The average-atom is a virtual element which has the same long-range properties as the alloy but consists only of a single element. Additionally, solute segregation to grain boundaries (GBs) is considered. The comparison of two different samples, namely a Sigma 11 GB and a large-scale nanocrystalline sample, reveals that while grain growth is reduced in the HEA compared to other pure metals, this does not stem from the chemical randomness. Instead, solute segregation is necessary to pin GBs up to high temperatures.
Typ des Eintrags: | Dissertation | ||||
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Erschienen: | 2022 | ||||
Autor(en): | Utt, Daniel Thomas | ||||
Art des Eintrags: | Erstveröffentlichung | ||||
Titel: | Defects in high-entropy alloys studied by atomic scale computer simulations | ||||
Sprache: | Englisch | ||||
Referenten: | Albe, Prof. Dr. Karsten ; Maresca, Ass.-Prof. Francesco | ||||
Publikationsjahr: | 2022 | ||||
Ort: | Darmstadt | ||||
Kollation: | VIII, 185 Seiten | ||||
Datum der mündlichen Prüfung: | 27 September 2021 | ||||
DOI: | 10.26083/tuprints-00020929 | ||||
URL / URN: | https://tuprints.ulb.tu-darmstadt.de/20929 | ||||
Kurzbeschreibung (Abstract): | High-entropy alloys (HEAs) are a new class of metal alloys containing multiple principal elements in concentrations between 5-35 at%. Due to their inherent chemical complexity, they possess a wide range of interesting properties, which we explore in greater detail throughout this thesis. Reduced or sluggish diffusion has been discussed for HEAs since their inception. We perform time-scale bridging simulations on the pseudo-binary (CoCrFeMn)_(1-x)Ni_x HEA, combining atomistic simulations of the vacancy migration energies and equilibrium vacancy concentrations with kinetic Monte Carlo simulations of tracer diffusion trajectories. Here, we extend the established random alloy model to account for the local chemical fluctuations within the complex alloy matrix. The results compare favorably to experimental tracer diffusion measurements. Dislocations in HEAs also interact with chemical fluctuations in the random matrix. This leads to a meandering dislocation line shape and localized pinning during dislocation glide. We find a physically motivated descriptor for these pinning sites in the form of a per-atom Peierls force. This descriptor shows good spatial correlation with observed dislocation pinning sites during glide. Furthermore, we show that the density of strong pinning sites in an alloy correlates not only with the critical shear required to initiate dislocation glide but also the dislocation mobility. We report on the grain growth properties of a CoCuFeNi model HEA. Atomistic simulations give unique insights into the effects of random chemical fluctuations by comparison of the HEA to its average-atom counterpart. The average-atom is a virtual element which has the same long-range properties as the alloy but consists only of a single element. Additionally, solute segregation to grain boundaries (GBs) is considered. The comparison of two different samples, namely a Sigma 11 GB and a large-scale nanocrystalline sample, reveals that while grain growth is reduced in the HEA compared to other pure metals, this does not stem from the chemical randomness. Instead, solute segregation is necessary to pin GBs up to high temperatures. |
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Status: | Verlagsversion | ||||
URN: | urn:nbn:de:tuda-tuprints-209296 | ||||
Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung |
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TU-Projekte: | DFG|STU611/2-1|Thermomechanische Ei | ||||
Hinterlegungsdatum: | 17 Mär 2022 09:55 | ||||
Letzte Änderung: | 18 Mär 2022 07:19 | ||||
PPN: | |||||
Referenten: | Albe, Prof. Dr. Karsten ; Maresca, Ass.-Prof. Francesco | ||||
Datum der mündlichen Prüfung / Verteidigung / mdl. Prüfung: | 27 September 2021 | ||||
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